TLV2354M

Name: TLV2354M
Brand: TI
SKU: TLV2354M
Price: 37.338 USD

現行

LinCMOS™ 四路低電壓差分比較器

立即訂購

產品規格表

document-pdfAcrobat LinCMOS Quadruple Low-Voltage Differential Comparators datasheet (Rev. C) (英文)

TLV2354M

現行

產品規格表

立即訂購

產品詳細資料

Number of channels

4

Output type

Open-collector, Open-drain

Propagation delay time (µs)

0.65

Vs (max) (V)

8

Vs (min) (V)

2

Rating

Military

Iq per channel (typ) (mA)

0.07

Vos (offset voltage at 25°C) (max) (mV)

5

Rail-to-rail

In to V-

Operating temperature range (°C)

-55 to 125

Input bias current (±) (max) (nA)

20

VICR (max) (V)

7

VICR (min) (V)

0

Number of channels

4

Output type

Open-collector, Open-drain

Propagation delay time (µs)

0.65

Vs (max) (V)

8

Vs (min) (V)

2

Rating

Military

Iq per channel (typ) (mA)

0.07

Vos (offset voltage at 25°C) (max) (mV)

5

Rail-to-rail

In to V-

Operating temperature range (°C)

-55 to 125

Input bias current (±) (max) (nA)

20

VICR (max) (V)

7

VICR (min) (V)

0

CDIP (J)

14

130.4652 mm² 19.56 x 6.67

CFP (W)

14

58.023 mm² 9.21 x 6.3

LCCC (FK)

20

79.0321 mm² 8.89 x 8.89

Wide Range of Supply Voltages
2 V to 8 V
Fully Characterized at 3 V and 5 V
Very-Low Supply-Current Drain
240 uA Typ at 3 V
Common-Mode Input Voltage Range Includes Ground
High Input Impedance...10¹² Typ
Fast Response Time...200 ns Typ for TTL-Level Input Step
Extremely Low Input Bias Current
5 pA Typ
Output Compatible With TTL, MOS, and CMOS
Built-In ESD Protection

LINCMOS is a trademark of Texas Instruments.

Wide Range of Supply Voltages
2 V to 8 V
Fully Characterized at 3 V and 5 V
Very-Low Supply-Current Drain
240 uA Typ at 3 V
Common-Mode Input Voltage Range Includes Ground
High Input Impedance...10¹² Typ
Fast Response Time...200 ns Typ for TTL-Level Input Step
Extremely Low Input Bias Current
5 pA Typ
Output Compatible With TTL, MOS, and CMOS
Built-In ESD Protection

LINCMOS is a trademark of Texas Instruments.

The TLV2354 consists of four independent, low-power comparators specifically designed for single power-supply applications and operateS with power-supply rails as low as 2 V. When powered from a 3-V supply, the typical supply current is only 240 uA.

The TLV2354 is designed using the Texas Instruments LinCMOS^TM technology and, therefore, features an extremely high input impedance (typically greater than 10¹² ), which allows direct interfacing with high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic wired-AND relationships. The TLV2354I is fully characterized for operation from - 40°C to 85°C. The TLV2354M is fully characterized for operation from - 55°C to 125°C.

The TLV2354 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a 1000-V ESD rating using human body model testing. However, care should be exercised in handling this device as exposure to ESD may result in degradation of the device parametric performance.

The TLV2354 consists of four independent, low-power comparators specifically designed for single power-supply applications and operateS with power-supply rails as low as 2 V. When powered from a 3-V supply, the typical supply current is only 240 uA.

The TLV2354 is designed using the Texas Instruments LinCMOS^TM technology and, therefore, features an extremely high input impedance (typically greater than 10¹² ), which allows direct interfacing with high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic wired-AND relationships. The TLV2354I is fully characterized for operation from - 40°C to 85°C. The TLV2354M is fully characterized for operation from - 55°C to 125°C.

The TLV2354 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a 1000-V ESD rating using human body model testing. However, care should be exercised in handling this device as exposure to ESD may result in degradation of the device parametric performance.

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