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TPS7H2221-SEP

現行

耐輻射 1.6-V 至 5.5-V 輸入 1.25-A 負載開關

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產品規格表

TPS7H2221-SEP

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Vin (min) (V) 1.6 Vin (max) (V) 5.5 Imax (A) 1.25 Ron (typ) (mΩ) 90 Shutdown current (ISD) (typ) (µA) 0.002 Quiescent current (Iq) (typ) (µA) 8 Soft start Fixed Rise Time Current limit type Fixed Features Quick output discharge, Short circuit protection, Thermal shutdown Rating Space Operating temperature range (°C) -55 to 125 FET Internal Device type Load switch Function Inrush current control, Short circuit protection, Thermal shutdown
Number of channels 1 Vin (min) (V) 1.6 Vin (max) (V) 5.5 Imax (A) 1.25 Ron (typ) (mΩ) 90 Shutdown current (ISD) (typ) (µA) 0.002 Quiescent current (Iq) (typ) (µA) 8 Soft start Fixed Rise Time Current limit type Fixed Features Quick output discharge, Short circuit protection, Thermal shutdown Rating Space Operating temperature range (°C) -55 to 125 FET Internal Device type Load switch Function Inrush current control, Short circuit protection, Thermal shutdown
SOT-SC70 (DCK) 6 4.2 mm² 2 x 2.1
  • Vendor item drawing available, VID V62/22609
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latch-up (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to effective linear energy transfer (LETEFF) of 43 MeV– cm2/mg.
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized to LETEFF of 43 MeV– cm2/mg.
  • Input operating voltage range (VIN): 1.6 to 5.5 V
  • Recommended continuous current (IMAX): 1.25 A
  • On-resistance (RON):
    • 116 mΩ (typ.) at VIN = 5 V
    • 115 mΩ (typ.) at VIN = 3.3 V
    • 133 mΩ (typ.) at VIN = 1.8 V
  • Output short protection (ISC): 3 A (typ.)
  • Low power consumption:
    • ON state (IQ): 8.3 µA (typ.)
    • OFF state (ISD): 3 nA (typ.)
  • Slow turn ON timing to limit inrush current (tON):
    • tON at 5 V = 1.68 ms at 3.61 mV/µs
    • tON at 3.3 V = 1.51 ms at 2.91 mV/µs
    • tON at 1.8 V = 1.32 ms at 2.15 mV/µs
  • Adjustable output discharge and fall time:
    • Internal QOD resistance = 9.2 Ω (typ.) at VIN = 3.3 V
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhance mold compound for low outgassing
  • Vendor item drawing available, VID V62/22609
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latch-up (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to effective linear energy transfer (LETEFF) of 43 MeV– cm2/mg.
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized to LETEFF of 43 MeV– cm2/mg.
  • Input operating voltage range (VIN): 1.6 to 5.5 V
  • Recommended continuous current (IMAX): 1.25 A
  • On-resistance (RON):
    • 116 mΩ (typ.) at VIN = 5 V
    • 115 mΩ (typ.) at VIN = 3.3 V
    • 133 mΩ (typ.) at VIN = 1.8 V
  • Output short protection (ISC): 3 A (typ.)
  • Low power consumption:
    • ON state (IQ): 8.3 µA (typ.)
    • OFF state (ISD): 3 nA (typ.)
  • Slow turn ON timing to limit inrush current (tON):
    • tON at 5 V = 1.68 ms at 3.61 mV/µs
    • tON at 3.3 V = 1.51 ms at 2.91 mV/µs
    • tON at 1.8 V = 1.32 ms at 2.15 mV/µs
  • Adjustable output discharge and fall time:
    • Internal QOD resistance = 9.2 Ω (typ.) at VIN = 3.3 V
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhance mold compound for low outgassing

The TPS7H2221-SEP device is a small, single channel load switch with controlled slew rate. The device contains an N-channel MOSFET that can operate over an input voltage range of 1.6 V to 5.5 V and can support a maximum continuous current of 1.25 A.

The switch ON state is controlled by a digital input that is capable of interfacing directly with low-voltage control signals. When power is first applied, a Smart Pull Down is used to keep the ON pin from floating until system sequencing is complete. Once the pin is deliberately driven high (VON>VIH), the Smart Pull Down will be disconnected to prevent unnecessary power loss.

The TPS7H2221-SEP load switch is also self-protected, meaning that it protects against short circuit events on the output of the device.

The TPS7H2221-SEP is available in a standard SC-70 package characterized for operation over an ambient temperature range of –55°C to 125°C.

The TPS7H2221-SEP device is a small, single channel load switch with controlled slew rate. The device contains an N-channel MOSFET that can operate over an input voltage range of 1.6 V to 5.5 V and can support a maximum continuous current of 1.25 A.

The switch ON state is controlled by a digital input that is capable of interfacing directly with low-voltage control signals. When power is first applied, a Smart Pull Down is used to keep the ON pin from floating until system sequencing is complete. Once the pin is deliberately driven high (VON>VIH), the Smart Pull Down will be disconnected to prevent unnecessary power loss.

The TPS7H2221-SEP load switch is also self-protected, meaning that it protects against short circuit events on the output of the device.

The TPS7H2221-SEP is available in a standard SC-70 package characterized for operation over an ambient temperature range of –55°C to 125°C.
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類型 標題 日期
* Data sheet TPS7H2221-SEP Radiation Tolerant 5.5-V, 1.25-A, 115-mΩ Load Switch datasheet (Rev. A) PDF | HTML 2022年 9月 20日
* VID TPS7H2221-SEP VID V62-22609 2022年 12月 22日
* Radiation & reliability report TPS7H2221-SEP Total Ionizing Dose (TID) Radiation Report (Rev. A) 2022年 9月 28日
* Radiation & reliability report TPS7H2221-SEP Production Flow and Reliability Report 2022年 9月 22日
* Radiation & reliability report TPS7H2221-SEP Neutron Displacement (NDD) Characterization Report 2022年 8月 18日
* Radiation & reliability report TPS7H2221-SEP Single-Event Effects (SEE) Report PDF | HTML 2022年 7月 12日
Technical article 航太級強化產品如何因應低地球軌道應用的挑戰 (Rev. A) PDF | HTML 2024年 1月 11日
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 2022年 9月 15日
Selection guide TI Space Products (Rev. I) 2022年 3月 3日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

設計與開發

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開發板

TPS7H2221EVM — 適用於 1.6-V 至 5.5-V 輸入、1.25-A 負載開關的 TPS7H2221 評估模組

TPS7H2221評估模組 (EVM) 展示了 TPS7H2221 負載開關的平行運作。EVM 允許將平行電路分為兩個獨立的單一裝置電路，並提供可填入其他被動元件的元件封裝，以進行自訂配置測試。

使用指南: PDF | HTML
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模擬型號

TPS7H2221-SEP PSpice Transient Model

SLVMDX7.ZIP (21 KB) - PSpice Model
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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