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TRF0108-SP

現行

Radiation-hardness-assured (RHA), near-DC to 12GHz, differential to single-ended (D2S) RF amplifier

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產品規格表

TRF0108-SP

現行
產品規格表 立即訂購

產品詳細資料

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.9 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 26.5 P1dB (typ) (dBm) 11 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -43 OIP2 (typ) (dBm) 34 2nd harmonic (dBc) -39 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.9 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 26.5 P1dB (typ) (dBm) 11 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -43 OIP2 (typ) (dBm) 34 2nd harmonic (dBc) -39 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
WQFN-FCRLF (RPV) 12 4 mm² (2 mm × 2 mm)
  • Standard microcircuit drawing (SMD), 5962-25201
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 100krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 100krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 75MeV-cm2/mg
      • Single event transient (SET) characterized to LET of 75MeV‑cm2/mg
  • Space-grade QML-P
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA
  • Standard microcircuit drawing (SMD), 5962-25201
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 100krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 100krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 75MeV-cm2/mg
      • Single event transient (SET) characterized to LET of 75MeV‑cm2/mg
  • Space-grade QML-P
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA

The TRF0108-SP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SP or AFE7950-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.

The TRF0108-SP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SP or AFE7950-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TRF0108-SP Radiation-Hardness-Assured (RHA), Near-DC to 12GHz, Differential to Single-Ended RF Amplifier datasheet PDF | HTML 2026/7/10
* 輻射及可靠性報告 TRF0108-SP Total Ionizing Dose (TID) Report (Rev. A) 2026/3/30
* 輻射及可靠性報告 TRF0108-SP Single-Event Effects (SEE) Radiation Report 2026/3/27
選擇指南 TI Space Products (Rev. L) 2026/3/27

設計與開發

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模擬型號

TRF0108-SP S-Parameter Model

SLOM538.ZIP (8 KB) - S 參數模型
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計算工具

RF-CASCADE-CALC-TOOL — TI RF 級聯計算機

A browser-based RF lineup analysis tool supporting up to 10 stages. Computes gain, NF, OIP3, OIP2, OP1dB, and derived metrics. Features dual-axis Plotly charts, P1dB saturation detection, and export to CSV
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認證

TRF0108SP-EVM-DOC-CERT — TRF0108SP-EVM EU Declaration of Conformity (DoC)

TRF0108SP-EVM EU Declaration of Conformity (DoC)
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WQFN-FCRLF (RPV) 12 Ultra Librarian
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