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UCC27524A-Q1

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UCC27624-Q1 現行 具 4V UVLO 和低傳播延遲的車用 30V VDD、5A/5A 雙通道低壓側閘極驅動器 Next generation with better negative voltage handling and robustness and wider voltage range

產品詳細資料

Number of channels 2 Power switch GaNFET, IGBT, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 140 Rise time (ns) 7 Fall time (ns) 6 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
Number of channels 2 Power switch GaNFET, IGBT, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 140 Rise time (ns) 7 Fall time (ns) 6 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm)
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
  • Industry-standard pin out
  • Two independent gate-drive channels
  • 5A peak source and sink-drive current
  • Independent enable function for each output
  • TTL and CMOS-compatible logic threshold independent of supply voltage
  • Hysteretic-logic thresholds for high-noise immunity
  • Ability to handle negative voltages (–5V) at inputs
  • Inputs and enable pin-voltage levels not restricted by VDD pin bias supply voltage
  • 4.5V to 18V single-supply range
  • Outputs held low during VDD-UVLO, (ensures glitch-free operation at power-up and power-down)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between 2-channels
  • Ability to parallel two outputs for high-drive current
  • Outputs held in low when inputs are floating
  • SOIC-8 and VSSOP-8 PowerPad™ package options
  • Operating temperature range of –40°C to 150°C
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
  • Industry-standard pin out
  • Two independent gate-drive channels
  • 5A peak source and sink-drive current
  • Independent enable function for each output
  • TTL and CMOS-compatible logic threshold independent of supply voltage
  • Hysteretic-logic thresholds for high-noise immunity
  • Ability to handle negative voltages (–5V) at inputs
  • Inputs and enable pin-voltage levels not restricted by VDD pin bias supply voltage
  • 4.5V to 18V single-supply range
  • Outputs held low during VDD-UVLO, (ensures glitch-free operation at power-up and power-down)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between 2-channels
  • Ability to parallel two outputs for high-drive current
  • Outputs held in low when inputs are floating
  • SOIC-8 and VSSOP-8 PowerPad™ package options
  • Operating temperature range of –40°C to 150°C

The UCC27524A-Q1 device is a dual-channel, high-speed, low-side, gate-driver device capable of effectively driving MOSFET and IGBT power switches. The UCC27524A-Q1 device is a variant of the UCC2752x family. The UCC27524A-Q1 device adds the ability to handle –5V directly at the input pins for increased robustness. The UCC27524A-Q1 device is a dual, non-inverting driver. Using a design that inherently minimizes shoot-through current, the UCC27524A-Q1 device is capable of delivering high-peak current pulses of up to 5A source and 5A sink into capacitive loads along with rail-to-rail drive capability and extremely small propagation delay (typically 17ns). In addition, the drivers feature matched, internal-propagation delays between the two channels which are very well suited for applications requiring dual-gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two channels in parallel to effectively increase current-drive capability or driving two switches in parallel with a single input signal. The input pin thresholds are based on TTL and CMOS compatible low-voltage logic, which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

For protection purposes, internal pull-up and pull-down resistors on the input pins of the UCC27524A-Q1 device ensure that outputs are held LOW when input pins are in floating condition. The UCC27524A-Q1 device features enable pins (ENA and ENB) to have better control of the operation of the driver applications. The pins are internally pulled up to VDD for active-high logic and are left open for standard operation.

The UCC27524A-Q1 devices is available in SOIC-8 (D) and VSSOP-PowerPAD-8 with exposed pad (DGN) packages.

The UCC27524A-Q1 device is a dual-channel, high-speed, low-side, gate-driver device capable of effectively driving MOSFET and IGBT power switches. The UCC27524A-Q1 device is a variant of the UCC2752x family. The UCC27524A-Q1 device adds the ability to handle –5V directly at the input pins for increased robustness. The UCC27524A-Q1 device is a dual, non-inverting driver. Using a design that inherently minimizes shoot-through current, the UCC27524A-Q1 device is capable of delivering high-peak current pulses of up to 5A source and 5A sink into capacitive loads along with rail-to-rail drive capability and extremely small propagation delay (typically 17ns). In addition, the drivers feature matched, internal-propagation delays between the two channels which are very well suited for applications requiring dual-gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two channels in parallel to effectively increase current-drive capability or driving two switches in parallel with a single input signal. The input pin thresholds are based on TTL and CMOS compatible low-voltage logic, which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

For protection purposes, internal pull-up and pull-down resistors on the input pins of the UCC27524A-Q1 device ensure that outputs are held LOW when input pins are in floating condition. The UCC27524A-Q1 device features enable pins (ENA and ENB) to have better control of the operation of the driver applications. The pins are internally pulled up to VDD for active-high logic and are left open for standard operation.

The UCC27524A-Q1 devices is available in SOIC-8 (D) and VSSOP-PowerPAD-8 with exposed pad (DGN) packages.

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UCC27444-Q1 現行 具有 -5V 輸入能力和啟用功能的車用 20V VDD、4A/4A 雙通道低壓側閘極驅動器 Similar pin-to-pin device with 4A/4A drive current and similar electrical characteristics

技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC27524A-Q1 Dual 5A, High-Speed, Low-Side Gate Driver With Negative Input Voltage Capability datasheet (Rev. C) PDF | HTML 2024/6/13
功能安全資訊 UCC27524A-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) PDF | HTML 2024/9/3
應用說明 Why use a Gate Drive Transformer? PDF | HTML 2024/3/4
應用說明 Static Magnet Power Supply Design for Magnetic Resonance Imaging Application PDF | HTML 2024/1/22
應用說明 Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024/1/22
應用說明 Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 2021/11/10
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
應用說明 Improving Efficiency of DC-DC Conversion through Layout 2019/5/7
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 2019/1/18
Application brief High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) 2018/11/26
更多文件說明 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018/10/29
應用說明 PFC Design Choice for On Board Charger Designs 2018/5/24
白皮書 Driving the future of HEV/EV with high-voltage solutions (Rev. B) 2018/5/16
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 2018/3/27
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018/3/16
技術文章 Are you on-board? Demystifying EV charging systems PDF | HTML 2017/7/31

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開發板

UCC27423-4-5-Q1EVM — 具有啟用功能的 UCC2742xQ1 雙路 4A 高速低壓側 MOSFET 驅動器評估模組

UCC2742xQ1 EVM 是高速雙 MOSFET 評估模組,提供可快速且輕鬆啟動 UCC2742xQ1 驅動器的測試平台。由 4V 至 15V 外部單電源供電,並配備全方位的測試點和跨接器組。所有裝置都有獨立的輸入與輸出線路,且所有裝置都共享一個共同接地。提供啟用 (ENBL) 功能以更妥善控制驅動器應用的運作,裝置的驅動器訊號可透過相同的啟用接腳啟用或停用。
使用指南: PDF
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模擬型號

UCC27524 PSpice Transient Model

SLUM243.ZIP (28 KB) - PSpice 模型
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模擬型號

UCC27524 TINA-TI Transient Reference Design

SLUM257.TSC (89 KB) - TINA-TI 參考設計
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模擬型號

UCC27524 TINA-TI Transient Spice Model

SLUM256.ZIP (8 KB) - TINA-TI Spice 模型
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模擬型號

UCC27524 Unencrypted PSpice Transient Model

SLUM510.ZIP (1 KB) - PSpice 模型
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計算工具

SLURB22 — UCC2752X Schematic Review Template

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參考設計

TIDM-02009 — 經 ASIL D 安全概念評估的高速牽引、雙向 DC/DC 轉換參考設計

此參考設計展現如何以單一 TMS320F28388D 即時 C2000 MCU 控制 HEV 或 EV 牽引逆變器和雙向 DC-DC 轉換器。牽引控制運用軟體式解析器轉數位轉換器 (RDC) 將馬達驅動至高達 20,000 RPM 的高速。DC-DC 轉換器則採用尖峰電流模式控制 (PCMC) 技術,以及全橋相移式轉換器 (PSFB) 拓撲與同步整流 (SR) 機制。牽引變流器級使用由 UCC5870-Q1 智慧閘極驅動器驅動的碳化矽 (SiC) 功率級。PCMC 波形是使用最先進的 PWM 模組和比較器子系統 (CMPSS)中的內建傾斜補償產生。ASIL 分解系統功能安全概念已通過 TÜV (...)

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (D) 8 Ultra Librarian
HVSSOP (DGN) 8 Ultra Librarian

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