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RDS (on) (Milliohm) 150 VDS (Max) (V) 600 ID (Max) (A) 6 Rating Catalog open-in-new Find other Gallium nitride (GaN) ICs

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VQFN (RWH) 32 64 mm² 8 x 8 open-in-new Find other Gallium nitride (GaN) ICs


  • TI GaN process qualified through accelerated reliability in-application hard-switching profiles
  • Enables high-density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm × 8 mm QFN package for ease of design and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V of unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20-ns propagation delay for high-frequency design
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25-V/ns to 100-V/ns adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with <100 ns response
    • Greater than 150-V/ns slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Undervoltage lockout (UVLO) protection on all supply rails
  • Device Options:
    • LMG3410R150: Latched overcurrent protection
    • LMG3411R150: Cycle-by-cycle overcurrent proection

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open-in-new Find other Gallium nitride (GaN) ICs


The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

open-in-new Find other Gallium nitride (GaN) ICs

More information

Get started with your GaN design today with the LMG3410R150 development kit:

Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 5
Type Title Date
* Datasheet LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) Feb. 13, 2020
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET Oct. 20, 2020
User guides LMG3410R150-031 EVM User Guide Apr. 02, 2019
Technical articles Automotive electronics design made easy Jul. 18, 2013
Technical articles John discusses benefits of LEDs in automobiles Jul. 16, 2013

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

LMG3410R150 daughter card
document-generic User guide
LMG3410EVM-031 configures two LMG3410R150 GaN FETs in a half bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry.This EVM is designed to work in conjunction with larger systems.
  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG3410R150
  • Single PWM input on board for PWM signal with 50-ns dead time
  • Latched over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short (...)
document-generic User guide
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching.  This (...)
  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3410
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

Design tools & simulation

SNOM676A.ZIP (42 KB) - PSpice Model
PSpice® for TI design and simulation tool
PSPICE-FOR-TI — PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
  • Leverages Cadence PSpice Technology
  • Preinstalled library with a suite of digital models to enable worst-case timing analysis
  • Dynamic updates ensure you have access to most current device models
  • Optimized for simulation speed without loss of accuracy
  • Supports simultaneous analysis of multiple products
  • (...)

CAD/CAE symbols

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