The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) | PDF | HTML | 13 Feb 2020 |
| White paper | Achieving GaN Products With Lifetime Reliability | PDF | HTML | 02 Jun 2021 | |
| White paper | TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 | 18 Mar 2021 | ||
| White paper | 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 | 18 Mar 2021 | ||
| White paper | Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs | 05 Jan 2021 | ||
| More literature | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | 20 Oct 2020 | ||
| Analog Design Journal | Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC | 22 Sep 2020 | ||
| Application note | Thermal Considerations for Designing a GaN Power Stage (Rev. B) | 04 Aug 2020 | ||
| EVM User's guide | LMG3410R150-031 EVM User Guide | 02 Apr 2019 |
For additional terms or required resources, click any title below to view the detail page where available.
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)
| Package | Pins | Download |
|---|---|---|
| VQFN (RWH) | 32 | View options |
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