LMG3410R150

ACTIVE

600-V 150-mΩ GaN with integrated driver and overcurrent protection

Product details

VDS (max) (V) 600 RDS(on) (mΩ) 150 ID (max) (A) 6 Features Bottom-side cooled, Latched overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 600 RDS(on) (mΩ) 150 ID (max) (A) 6 Features Bottom-side cooled, Latched overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RWH) 32 64 mm² 8 x 8
  • TI GaN process qualified through accelerated reliability in-application hard-switching profiles
  • Enables high-density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm × 8 mm QFN package for ease of design and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V of unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20-ns propagation delay for high-frequency design
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25-V/ns to 100-V/ns adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with <100 ns response
    • Greater than 150-V/ns slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Undervoltage lockout (UVLO) protection on all supply rails
  • Device Options:
    • LMG3410R150: Latched overcurrent protection
    • LMG3411R150: Cycle-by-cycle overcurrent proection
  • TI GaN process qualified through accelerated reliability in-application hard-switching profiles
  • Enables high-density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm × 8 mm QFN package for ease of design and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V of unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20-ns propagation delay for high-frequency design
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25-V/ns to 100-V/ns adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with <100 ns response
    • Greater than 150-V/ns slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Undervoltage lockout (UVLO) protection on all supply rails
  • Device Options:
    • LMG3410R150: Latched overcurrent protection
    • LMG3411R150: Cycle-by-cycle overcurrent proection

The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

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Design & development

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Evaluation board

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Daughter card

LMG3410EVM-031 — LMG3410R150 600-V 150-mΩ GaN half-bridge daughter card

LMG3410EVM-031 configures two LMG3410R150 GaN FETs in a half bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry.This EVM is designed to work in conjunction with larger systems.
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Simulation model

LMG3410R150 Unencrypted PSPICE Trans Model Package (Rev. A)

SNOM676A.ZIP (42 KB) - PSpice Model
Calculation tool

LMGXX-GAN-LLC-CALC GaN LLC resonant converter device loss calculator

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Supported products & hardware

Supported products & hardware

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Calculation tool

SNOR029 GaN CCM Boost PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG3410R050 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Calculation tool

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Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG3410R050 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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