Product details


RDS (on) (Milliohm) 150 VDS (Max) (V) 600 ID (Max) (A) 6 Rating Catalog open-in-new Find other Gallium nitride (GaN) ICs

Package | Pins | Size

VQFN (RWH) 32 64 mm² 8 x 8 open-in-new Find other Gallium nitride (GaN) ICs


  • TI GaN process qualified through accelerated reliability in-application hard-switching profiles
  • Enables high-density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm × 8 mm QFN package for ease of design and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V of unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20-ns propagation delay for high-frequency design
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25-V/ns to 100-V/ns adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with <100 ns response
    • Greater than 150-V/ns slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Undervoltage lockout (UVLO) protection on all supply rails
  • Device Options:
    • LMG3410R150: Latched overcurrent protection
    • LMG3411R150: Cycle-by-cycle overcurrent proection

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open-in-new Find other Gallium nitride (GaN) ICs


The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

open-in-new Find other Gallium nitride (GaN) ICs

More information

Get started with your GaN design today with the LMG3411R150 development kit:

Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 6
Type Title Date
* Datasheet LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) Feb. 13, 2020
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET Oct. 20, 2020
More literature GaN FET Reliability to Power-line Surges Under Use-conditions Mar. 25, 2019
Application note Third quadrant operation of GaN Feb. 25, 2019
Technical articles Searching for the newest innovations in power? Find them at APEC Feb. 08, 2019
User guide LMG3411R150-031 EVM user guide Jan. 17, 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

document-generic User guide

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)

  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate half-bridge performance of LMG341x daughter cards
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring (...)
document-generic User guide
LMG3411EVM-031 configures two LMG3411R150 GaN FETs in a half bridge with the cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.
  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3411R150
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Cycle by cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have (...)

Design tools & simulation

PSpice® for TI design and simulation tool
PSPICE-FOR-TI — PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
  • Leverages Cadence PSpice Technology
  • Preinstalled library with a suite of digital models to enable worst-case timing analysis
  • Dynamic updates ensure you have access to most current device models
  • Optimized for simulation speed without loss of accuracy
  • Supports simultaneous analysis of multiple products
  • (...)

Reference designs

65-W USB Type-C™ high density active clamp flyback with GaN reference design
PMP21639 — This reference design is a high density USB adapter that uses the UCC28780 active clamp flyback controller and LMG3411R150 GaN with integrated driver and protection. The maximum power rating is 65W at 20V output but is adjustable for 20V/15V/9V/5V output voltage and 3A.  This design reaches a (...)
document-generic Schematic document-generic User guide
Three-phase, 1.25-kW, 200-VAC small form factor GaN inverter reference design for integrated drives
TIDA-00915 — This reference design is a three-phase inverter with a continuous power rating of 1.25 kW at 50°C ambient and 550 W at 85°C ambient for driving 200-V AC servo motors. It features 600-V LMG3411R150 Gallium Nitride (GaN) power modules with an integrated FET and gate driver mounted on an (...)
document-generic Schematic document-generic User guide

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