600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection
Product details
Parameters
Package | Pins | Size
Features
- TI GaN process qualified through accelerated reliability in-application hard-switching profiles
- Enables high-density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm × 8 mm QFN package for ease of design and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V of unregulated supply needed
- Integrated gate driver
- Zero common source inductance
- 20-ns propagation delay for high-frequency design
- Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
- 25-V/ns to 100-V/ns adjustable slew rate
- Robust protection
- Requires no external protection components
- Overcurrent protection with <100 ns response
- Greater than 150-V/ns slew rate immunity
- Transient overvoltage immunity
- Overtemperature protection
- Undervoltage lockout (UVLO) protection on all supply rails
- Device Options:
- LMG3410R150: Latched overcurrent protection
- LMG3411R150: Cycle-by-cycle overcurrent proection
All trademarks are the property of their respective owners.
Description
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
More information
Get started with your GaN design today with the LMG3411R150 development kit:
- LMG3411R150 daughtercard. Buy from TI
- LMG34xx GaN system-level evaluation motherboard. Buy from TI
Technical documentation
Type | Title | Date | |
---|---|---|---|
* | Datasheet | LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) | Feb. 13, 2020 |
More literature | A Generalized Approach to Determine the Switching Lifetime of a GaN FET | Oct. 20, 2020 | |
More literature | GaN FET Reliability to Power-line Surges Under Use-conditions | Mar. 25, 2019 | |
Application note | Third quadrant operation of GaN | Feb. 25, 2019 | |
Technical articles | Searching for the newest innovations in power? Find them at APEC | Feb. 08, 2019 | |
User guide | LMG3411R150-031 EVM user guide | Jan. 17, 2019 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)
Features
- Input voltage operates up to 600 V
- Simple open loop design to evaluate half-bridge performance of LMG341x daughter cards
- Single PWM input on board for PWM signal with 50 ns dead time
- Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring (...)
Description
Features
- Input voltage operates up to 600V
- Simple open loop design to evaluate performance of LMG3411R150
- Single PWM input on board for PWM signal with 50 ns dead time
- Cycle by cycle over current protection function
- Convenient probe points for logic and power stage measurements with oscilloscope probes that have (...)
Design tools & simulation
Features
- Leverages Cadence PSpice Technology
- Preinstalled library with a suite of digital models to enable worst-case timing analysis
- Dynamic updates ensure you have access to most current device models
- Optimized for simulation speed without loss of accuracy
- Supports simultaneous analysis of multiple products
- (...)
Reference designs
Design files
-
download PMP21639 BOM.pdf (343KB) -
download PMP21639 Assembly Drawing.pdf (268KB) -
download PMP21639 PCB.pdf (1231KB) -
download PMP21639 CAD Files.zip (2618KB) -
download PMP21639 Gerber.zip (523KB)
Design files
CAD/CAE symbols
Package | Pins | Download |
---|---|---|
VQFN (RWH) | 32 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.