Product details


RDS (on) (Milliohm) 150 VDS (Max) (V) 600 ID (Max) (A) 6 Approx. price (US$) 5.17 | 1ku Rating Catalog open-in-new Find other Gallium nitride (GaN) ICs

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VQFN (RWH) 32 64 mm² 8 x 8 open-in-new Find other Gallium nitride (GaN) ICs


  • TI GaN process qualified through accelerated reliability in-application hard-switching profiles
  • Enables high-density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm × 8 mm QFN package for ease of design and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V of unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20-ns propagation delay for high-frequency design
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25-V/ns to 100-V/ns adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with <100 ns response
    • Greater than 150-V/ns slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Undervoltage lockout (UVLO) protection on all supply rails
  • Device Options:
    • LMG3410R150: Latched overcurrent protection
    • LMG3411R150: Cycle-by-cycle overcurrent proection

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open-in-new Find other Gallium nitride (GaN) ICs


The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

open-in-new Find other Gallium nitride (GaN) ICs

More information

Get started with your GaN design today with the LMG3411R150 development kit:

Technical documentation

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Type Title Date
* Datasheet LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) Feb. 13, 2020
More literature GaN FET Reliability to Power-line Surges Under Use-conditions Mar. 25, 2019
Application notes Third quadrant operation of GaN Feb. 25, 2019
Technical articles Searching for the newest innovations in power? Find them at APEC Feb. 08, 2019
User guides LMG3411R150-031 EVM user guide Jan. 17, 2019
Technical articles A New Understanding: Blast Motion redefines movement, tracking and training for athletes. Aug. 06, 2014
Technical articles Improving Fly-Buck Regulation Using Opto (Part-1) Jul. 15, 2014
Technical articles Altium and WEBENCH – together at last Jul. 12, 2014

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

LMG3411R150 daughter card
document-generic User guide
LMG3411EVM-031 configures two LMG3411R150 GaN FETs in a half bridge with the cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.
  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3411R150
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Cycle by cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have (...)
document-generic User guide
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching.  This (...)
  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3410
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

Reference designs

Three-phase, 1.25-kW, 200-VAC small form factor GaN inverter reference design for integrated drives
TIDA-00915 — This reference design is a three-phase inverter with a continuous power rating of 1.25 kW at 50°C ambient and 550 W at 85°C ambient for driving 200-V AC servo motors. It features 600-V LMG3411R150 Gallium Nitride (GaN) power modules with an integrated FET and gate driver mounted on an (...)
document-generic Schematic document-generic User guide

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Integrated Motor Drives with TI-GaN

This training video walks through the system level benefits of integrated motor drives and how GaN technology enables this new trend in the industry.

Posted: 13-Jan-2019
Duration: 38:11

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