SLVSD29 October   2015 DRV8704

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  PWM Motor Drivers
      2. 7.3.2  Direct PWM Input Mode (Dual Brushed DC Gate Driver)
      3. 7.3.3  Current Regulation
      4. 7.3.4  Decay Modes
      5. 7.3.5  Blanking Time
      6. 7.3.6  Gate Drivers
      7. 7.3.7  Configuring Gate Drivers
      8. 7.3.8  External FET Selection
      9. 7.3.9  Protection Circuits
        1. 7.3.9.1 Overcurrent Protection (OCP)
        2. 7.3.9.2 Gate Driver Fault (PDF)
        3. 7.3.9.3 Thermal Shutdown (TSD)
        4. 7.3.9.4 Undervoltage Lockout (UVLO)
      10. 7.3.10 Serial Data Format
    4. 7.4 Device Functional Modes
    5. 7.5 Register Maps
      1. 7.5.1 Control Registers
        1. 7.5.1.1 CTRL Register (Address = 0x00h)
          1. Table 4. CTRL Register
        2. 7.5.1.2 TORQUE Register (Address = 0x01h)
          1. Table 5. TORQUE Register
        3. 7.5.1.3 OFF Register (Address = 0x02h)
          1. Table 6. OFF Register
        4. 7.5.1.4 BLANK Register (Address = 0x03h)
          1. Table 7. BLANK Register
        5. 7.5.1.5 DECAY Register (Address = 0x04h)
          1. Table 8. DECAY Register
        6. 7.5.1.6 Reserved Register Address = 0x05h
          1. Table 9. Reserved Register
        7. 7.5.1.7 DRIVE Register Address = 0x06h
          1. Table 10. DRIVE Register
        8. 7.5.1.8 STATUS Register (Address = 0x07h)
          1. Table 11. STATUS Register
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External FET Selection
        2. 8.2.2.2 IDRIVE Configuration
        3. 8.2.2.3 Current Chopping Configuration
        4. 8.2.2.4 Decay Modes
        5. 8.2.2.5 Sense Resistor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.3.7 Configuring Gate Drivers

IDRIVE and TDRIVE are selected based on the size of external FETs used. These registers need to be configured so that the FET gates are charged completely during TDRIVE. If IDRIVE and TDRIVE are chosen to be too low for a given FET, then the FET may not turn on completely. It is suggested to adjust these values in-system with the required external FETs and motors in order to determine the best possible setting for any application.

Note that TDRIVE will not increase the PWM time or change the PWM chopping frequency.

In a system with capacitor charge Q and desired rise time RT, IDRIVE, and TDRIVE can be initially selected based on:

Equation 2. DRV8704 eq_08_idrive_lvsd29.gif
Equation 3. TDRIVE > 2 × RT

For best results, select the smallest IDRIVE and TDRIVE that meet the above conditions.

Example:

If the gate charge is 15 nC and the desired rise time is 400 ns, then select

IDRIVEP = 50 mA, IDRIVEN = 100 mA

TDRIVEP = TDRIVEN = 1050 ns