LMG3522R050
650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
LMG3522R050
- 650-V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200-V/ns FET hold-off
- 3.6-MHz switching frequency
- 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5-V to 18-V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
- Withstands 720-V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
The LMG3522R050 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3522R050 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TIs low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 15 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.
Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | LMG3522R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet | PDF | HTML | 20 May 2022 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
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LMG3522EVM-042 — LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card
LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
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Package | Pins | Download |
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VQFN (RQS) | 52 | View options |
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