TLC2201AM

ACTIVE

Low Noise Precision Advanced LinCMOS™ Single Operational Amplifier

Product details

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.6 Vos (offset voltage at 25°C) (max) (mV) 0.2 Offset drift (typ) (µV/°C) 0.5 Input bias current (max) (pA) 60 GBW (typ) (MHz) 1.8 Slew rate (typ) (V/µs) 2.5 Rail-to-rail In to V-, Out Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 8 CMRR (typ) (dB) 110 Rating Automotive Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.0045 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -2.3 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.2
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.6 Vos (offset voltage at 25°C) (max) (mV) 0.2 Offset drift (typ) (µV/°C) 0.5 Input bias current (max) (pA) 60 GBW (typ) (MHz) 1.8 Slew rate (typ) (V/µs) 2.5 Rail-to-rail In to V-, Out Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 8 CMRR (typ) (dB) 110 Rating Automotive Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.0045 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -2.3 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.2
SOIC (D) 8 29.4 mm² 4.9 x 6
  • B Grade Is 100% Tested for Noise
    • 30 nV/Hz Max at f = 10 Hz
    • 12 nV/Hz Max at f = 1 kHz
  • Low Input Offset Voltage . . . 500 µV Max
  • Excellent Offset Voltage Stability With Temperature . . . 0.5 µV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current
    • 1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range Includes the Negative Rail
  • Fully Specified For Both Single-Supply and Split-Supply Operation

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.

  • B Grade Is 100% Tested for Noise
    • 30 nV/Hz Max at f = 10 Hz
    • 12 nV/Hz Max at f = 1 kHz
  • Low Input Offset Voltage . . . 500 µV Max
  • Excellent Offset Voltage Stability With Temperature . . . 0.5 µV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current
    • 1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range Includes the Negative Rail
  • Fully Specified For Both Single-Supply and Split-Supply Operation

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

Download

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 1
Type Title Date
* Data sheet Advanced LinCMOS (TM) Low-Noise Precision Operational Amplifiers datasheet (Rev. B) 11 Jan 2008

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos