Startseite Energiemanagement Gate-Treiber Halbbrückentreiber

Halbbrücken-Gate-Treiber für GaNFET mit 1,2 A/5 A, 90 V

LM5113 wird nicht für neue Designs empfohlen
Dieses Produkt ist weiterhin für Bestandskunden erhältlich. Neue Designs sollten ein alternatives Produkt erwägen.
Drop-In-Ersatz mit gegenüber dem verglichenen Baustein verbesserter Funktionalität
LM5113-Q1 AKTIV Halbbrücken-Gate-Treiber für GaNFET für Fahrzeuganwendungen, mit 1,2 A/5 A, 100 V. Automotive qualified
Selbe Funktionalität wie der verglichene Baustein bei gleicher Anschlussbelegung
LMG1205 AKTIV Halbbrücken-Gate-Treiber, 1,2 A, 5 A, 90 V, mit 5-V-UVLO für GaNFET und MOSFET Same specifications, DSBGA package

Produktdetails

Bootstrap supply voltage (max) (V) 107 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Dual, Independent
Bootstrap supply voltage (max) (V) 107 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Dual, Independent
DSBGA (YFX) 12 3.24 mm² 1.8 x 1.8 WSON (DPR) 10 16 mm² 4 x 4
  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption
  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

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* Data sheet LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. I) PDF | HTML 28 Okt 2019

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