The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.
|Number of channels (#)|
|Total Supply Voltage (Min) (+5V=5, +/-5V=10)|
|Total Supply Voltage (Max) (+5V=5, +/-5V=10)|
|GBW (Typ) (MHz)|
|Slew Rate (Typ) (V/us)|
|Vos (offset voltage @ 25 C) (Max) (mV)|
|Offset drift (Typ) (uV/C)|
|Iq per channel (Typ) (mA)|
|Vn at 1 kHz (Typ) (nV/rtHz)|
|CMRR (Typ) (dB)|
|Operating temperature range (C)|
|Package size: mm2:W x L (PKG)|
|Input bias current (Max) (pA)|
|Output current (Typ) (mA)|