SBOSAA4B April   2025  – August 2025 INA1H94-SP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information: INA1H94-SP
    5. 5.5 Electrical Characteristics: VS = ±9V
    6. 5.6 Electrical Characteristics: V+ = 5V and V– = 0V
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Common-Mode Range
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 SAR ADC 12-B, 8-Channel Battery Cell Voltage Monitor
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 PSpice® for TI
        2. 8.1.1.2 TINA-TI™ Simulation Software (Free Download)
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information: INA1H94-SP

THERMAL METRIC(1) INA1H94-SP UNIT
HKX (CFP)
8 PINS
RθJA Junction-to-ambient thermal resistance 119.8 ℃/W
RθJC(top) Junction-to-case(top) thermal resistance 42.0 ℃/W
RθJB Junction-to-board thermal resistance 102.2 ℃/W
ψJT Junction-to-top characterization parameter 35.3 ℃/W
ψJB Junction-to-board characterization parameter 96.2 ℃/W
RθJC(bot) Junction-to-case(bottom) thermal resistance 30.9 ℃/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.