LM74912-Q1 controls two N-channel power MOSFETs with DGATE used to control diode MOSFET to emulate an ideal diode and HGATE controlling second MOSFET for power path cut-off when disabled or during a overcurrent, overvoltage, or undervoltage events. HGATE controlled MOSFET can be used to clamp the output during overvoltage or load dump conditions. LM74912-Q1 can be placed into low quiescent current mode using EN or SLEEP, where both DGATE and HGATE are turned OFF. The device has a separate supply input pin (VS). The charge pump is derived from this supply input. With the separate supply input provision and separate GATE control architecture, the LM74912-Q1 device drives back to back connected MOSFET in common drain topology thus enabling various system architectures such as power supply ORing and power supply priority MUX applications. With these various topologies, the system designers can design the front-end power system to meet various system design requirements.

The device has a separate supply input pin (VS). The charge pump is derived from this supply input. With the separate supply input provision and separate GATE control architecture, the LM74912-Q1 device drives back to back connected MOSFET in common drain topology thus enabling various system architectures such as power supply ORing and power supply priority MUX applications. With these various topologies, the system designers can design the front-end power system to meet various system design requirements.