SNOSDA7D September   2020  – March 2022 LMG3422R030 , LMG3425R030

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Switching Parameters
      1. 8.1.1 Turn-On Times
      2. 8.1.2 Turn-Off Times
      3. 8.1.3 Drain-Source Turn-On Slew Rate
      4. 8.1.4 Turn-On and Turn-Off Switching Energy
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  GaN FET Operation Definitions
      2. 9.3.2  Direct-Drive GaN Architecture
      3. 9.3.3  Drain-Source Voltage Capability
      4. 9.3.4  Internal Buck-Boost DC-DC Converter
      5. 9.3.5  VDD Bias Supply
      6. 9.3.6  Auxiliary LDO
      7. 9.3.7  Fault Detection
        1. 9.3.7.1 Overcurrent Protection and Short-Circuit Protection
        2. 9.3.7.2 Overtemperature Shutdown
        3. 9.3.7.3 UVLO Protection
        4. 9.3.7.4 Fault Reporting
      8. 9.3.8  Drive Strength Adjustment
      9. 9.3.9  Temperature-Sensing Output
      10. 9.3.10 Ideal-Diode Mode Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slew Rate Selection
          1. 10.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
        2. 10.2.2.2 Signal Level-Shifting
        3. 10.2.2.3 Buck-Boost Converter Design
      3. 10.2.3 Application Curves
    3. 10.3 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Using an Isolated Power Supply
    2. 11.2 Using a Bootstrap Diode
      1. 11.2.1 Diode Selection
      2. 11.2.2 Managing the Bootstrap Voltage
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Solder-Joint Reliability
      2. 12.1.2 Power-Loop Inductance
      3. 12.1.3 Signal-Ground Connection
      4. 12.1.4 Bypass Capacitors
      5. 12.1.5 Switch-Node Capacitance
      6. 12.1.6 Signal Integrity
      7. 12.1.7 High-Voltage Spacing
      8. 12.1.8 Thermal Recommendations
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Export Control Notice
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RQZ|54
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Overcurrent Protection and Short-Circuit Protection

There are two types of current faults which can be detected by the driver: overcurrent fault and short-circuit fault.

The overcurrent protection (OCP) circuit monitors drain current and compares that current signal with an internally set limit. Upon detection of the overcurrent, the LMG342xR030 conducts cycle-by-cycle overcurrent protection as shown in Figure 9-2. In this mode, the GaN device is shut off when overcurrent happens, but the overcurrent signal clears after the input PWM goes low. In the next cycle, the GaN device can turn on as normal. The cycle-by-cycle function can be used in cases where steady-state operation current is below the OCP level but transient response can still reach current limit, while the circuit operation cannot be paused. The cycle-by-cycle function also prevents the GaN device from overheating by overcurrent induced conduction losses.

The short-circuit protection (SCP) monitors drain current and compares that current signal with a internally set limit higher than that of OCP as shown in Figure 9-3. The short-circuit protection is designed to protect the GaN device from high-current short-circuit fault. If a short-circuit fault is detected, the driver turn-off is intentionally slowed down to obtain lower di/dt so that a lower overshoot voltage and ringing can be achieved during the turn-off event. On detection of an overcurrent fault, LMG342xR030 latches off. This fast response circuit helps protect the GaN device even under a hard short-circuit condition. In this protection, the GaN device is shut off and held off until the fault is reset by either holding the IN pin low for a period of time defined in the Specifications or removing power from VDD.

During OCP or SCP in a half bridge, after the current reaches the upper limit and the device is turned off by protection, the PWM input of the device could still be high and the PWM input of the complementary device could still be low. In this case, the load current can flow through the third quadrant of the complementary device with no synchronous rectification. The extra high negative voltage drop (–6 V to –8 V) from drain to source could lead to high third-quadrant loss, similar to dead-time loss but for a longer time.

For safety considerations, OCP allows cycle-by-cycle operation while SCP latches the device until reset. By reading the FAULT and OC pins, the exact current fault type can be determined. Refer to Fault Reporting for detailed information.

Figure 9-2 Cycle-by-Cycle OCP Operation
Figure 9-3 Overcurrent Detection vs Short-Circuit Detection