SNOSDA7D September   2020  – March 2022 LMG3422R030 , LMG3425R030

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Switching Parameters
      1. 8.1.1 Turn-On Times
      2. 8.1.2 Turn-Off Times
      3. 8.1.3 Drain-Source Turn-On Slew Rate
      4. 8.1.4 Turn-On and Turn-Off Switching Energy
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  GaN FET Operation Definitions
      2. 9.3.2  Direct-Drive GaN Architecture
      3. 9.3.3  Drain-Source Voltage Capability
      4. 9.3.4  Internal Buck-Boost DC-DC Converter
      5. 9.3.5  VDD Bias Supply
      6. 9.3.6  Auxiliary LDO
      7. 9.3.7  Fault Detection
        1. 9.3.7.1 Overcurrent Protection and Short-Circuit Protection
        2. 9.3.7.2 Overtemperature Shutdown
        3. 9.3.7.3 UVLO Protection
        4. 9.3.7.4 Fault Reporting
      8. 9.3.8  Drive Strength Adjustment
      9. 9.3.9  Temperature-Sensing Output
      10. 9.3.10 Ideal-Diode Mode Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slew Rate Selection
          1. 10.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
        2. 10.2.2.2 Signal Level-Shifting
        3. 10.2.2.3 Buck-Boost Converter Design
      3. 10.2.3 Application Curves
    3. 10.3 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Using an Isolated Power Supply
    2. 11.2 Using a Bootstrap Diode
      1. 11.2.1 Diode Selection
      2. 11.2.2 Managing the Bootstrap Voltage
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Solder-Joint Reliability
      2. 12.1.2 Power-Loop Inductance
      3. 12.1.3 Signal-Ground Connection
      4. 12.1.4 Bypass Capacitors
      5. 12.1.5 Switch-Node Capacitance
      6. 12.1.6 Signal Integrity
      7. 12.1.7 High-Voltage Spacing
      8. 12.1.8 Thermal Recommendations
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Export Control Notice
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RQZ|54
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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