SBOS410O June   2007  – October 2025 REF50 , REF50E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics REF50xxI and REF50xxAI
    6. 6.6 Electrical Characteristics REF50xxEI
    7. 6.7 Typical Characteristics: REF50xxI, REF50xxAI
    8. 6.8 Typical Characteristics: REF50xxEI
  8. 7 Parameter Measurement Information
    1. 7.1 Solder Heat Shift
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Temperature Monitoring
      2. 8.3.2 Temperature Drift
      3. 8.3.3 Thermal Hysteresis
      4. 8.3.4 Noise Performance
      5. 8.3.5 Long-Term Stability
      6. 8.3.6 Output Adjustment Using the TRIM/NR Pin
    4. 8.4 Device Functional Modes
      1. 8.4.1 Basic Connections
      2. 8.4.2 Supply Voltage
      3. 8.4.3 Negative Reference Voltage
  10. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 16-bit, 250KSPS Data Acquisition System
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 REF50xxI, REF50xxAI Layout Guidelines
        2. 9.4.1.2 REF50xxEI Layout Guidelines
      2. 9.4.2 Layout Example
      3. 9.4.3 Power Dissipation
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.5 Long-Term Stability

Due to aging and environmental effects, all semiconductor devices experience physical changes of the semiconductor die and the packaging material over time. Over time, the changes and the associated package stress on the die cause the output voltage in precision voltage references to deviate. The value of such change is specified in the data sheet by a parameter called the long-term stability (also known as the long-term drift (LTD)). Equation 5 shows how LTD is calculated. Note that the LTD value is positive if the output voltage drifts higher over time and negative if the voltage drifts lower over time. Figure 6-23 through Figure 6-30 show the drift of the output voltage for REF50xx over the first 4000 operating hours.

Equation 5. L T D p p m | t = n = V O U T | t = 0 - V O U T | t = n V O U T | t = 0 × 10 6

where

  • LTD(ppm)|t=n = long-term stability (ppm)
  • VOUT|t=0 = output voltage at time = 0 hr
  • VOUT|t=n = output voltage at time = n hr