SCDS485A July   2025  – September 2025 TMUX5411 , TMUX5412 , TMUX5413

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  ±15V Dual Supply: Electrical Characteristics 
    6. 5.6  ±15V Dual Supply: Switching Characteristics 
    7. 5.7  48V Single Supply: Electrical Characteristics 
    8. 5.8  48V Single Supply: Switching Characteristics 
    9. 5.9  12 V Single Supply: Electrical Characteristics 
    10. 5.10 12V Single Supply: Switching Characteristics 
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  tON and tOFF Time
    5. 6.5  Propagation Delay
    6. 6.6  Charge Injection
    7. 6.7  Off Isolation
    8. 6.8  Channel-to-Channel Crosstalk
    9. 6.9  Bandwidth
    10. 6.10 THD + Noise
    11. 6.11 Power Supply Rejection Ratio (PSRR)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bidirectional Operation
      2. 7.3.2 Rail-to-Rail Operation
      3. 7.3.3 1.8 V Logic Compatible Inputs
      4. 7.3.4 Flat On-Resistance
      5. 7.3.5 Power-Up Sequence Free
    4. 7.4 Device Functional Modes
      1. 7.4.1 Truth Tables
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Typical Application - Gain Switching
        1. 8.1.1.1 Design Requirements
        2. 8.1.1.2 Application Curve
    2. 8.2 Power Supply Recommendations
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Charge Injection

This device has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 6-6 shows the setup used to measure charge injection from source (Sx) to drain (Dx).

TMUX5411 TMUX5412 TMUX5413 Charge-Injection Measurement SetupFigure 6-6 Charge-Injection Measurement Setup