SLUSDV7B October 2019 – March 2021 UCC23313-Q1
Refer to the PDF data sheet for device specific package drawings
The active pull-down function is used to pull the IGBT or MOSFET gate to the low state when no power is connected to the VCC supply. This feature prevents false IGBT and MOSFET turn-on by clamping VOUT pin to approximately 2V.
When the output stage of the driver is in an unbiased condition (VCC floating), the driver outputs (see Figure 8-4) are held low by an active clamp circuit that limits the voltage rise on the driver outputs. In this condition, the upper PMOS & NMOS are held off while the lower NMOS gate is tied to the driver output through an internal 500-kΩ resistor. In this configuration, the lower NMOS device effectively clamps the output (VOUT) to less than 2V.