JAJSDY1C June   2017  – March 2018 TPS25740B

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      概略回路図
  4. 改訂履歴
  5. 概要(続き)
  6. Device Comparison Table
  7. Pin Configuration and Functions
    1.     Pin Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Switching Characteristics
    8. 8.8 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
      1. 9.1.1 VBUS Capacitance
      2. 9.1.2 USB Data Communications
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  ENSRC
      2. 9.3.2  USB Type-C CC Logic (CC1, CC2)
      3. 9.3.3  USB PD BMC Transmission (CC1, CC2, VTX)
      4. 9.3.4  USB PD BMC Reception (CC1, CC2)
      5. 9.3.5  Discharging (DSCG, VPWR)
        1. 9.3.5.1 Discharging after a Fault (VPWR)
      6. 9.3.6  Configuring Voltage Capabilities (HIPWR)
      7. 9.3.7  Configuring Power Capabilities (PSEL, PCTRL, HIPWR)
      8. 9.3.8  Gate Driver (GDNG, GDNS)
      9. 9.3.9  Fault Monitoring and Protection
        1. 9.3.9.1 Over/Under Voltage (VBUS)
        2. 9.3.9.2 Over-Current Protection (ISNS, VBUS)
        3. 9.3.9.3 System Fault Input (GD, VPWR)
      10. 9.3.10 Voltage Control (CTL1, CTL2,CTL3)
      11. 9.3.11 Sink Attachment Indicator (DVDD)
      12. 9.3.12 Power Supplies (VAUX, VDD, VPWR, DVDD)
      13. 9.3.13 Grounds (AGND, GND)
      14. 9.3.14 Output Power Supply (DVDD)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Sleep Mode
      2. 9.4.2 Checking VBUS at Start Up
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 System-Level ESD Protection
      2. 10.1.2 Using ENSRC to Enable the Power Supply upon Sink Attachment
      3. 10.1.3 Use of GD Internal Clamp
      4. 10.1.4 Resistor Divider on GD for Programmable Start Up
      5. 10.1.5 Selection of the CTL1, CTL2, and CTL3 Resistors (R(FBL1), R(FBL2), and R(FBL3))
      6. 10.1.6 Voltage Transition Requirements
      7. 10.1.7 VBUS Slew Control using GDNG C(SLEW)
      8. 10.1.8 Tuning OCP using RF and CF
    2. 10.2 Typical Applications
      1. 10.2.1 Typical Application, A/C Power Source (Wall Adapter)
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Power Pin Bypass Capacitors
          2. 10.2.1.2.2 Non-Configurable Components
          3. 10.2.1.2.3 Configurable Components
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Typical Application, D/C Power Source
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
          1. 10.2.2.2.1 Power Pin Bypass Capacitors
          2. 10.2.2.2.2 Non-Configurable Components
          3. 10.2.2.2.3 Configurable Components
        3. 10.2.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 D/C Power Source (Power Hub)
      2. 10.3.2 A/C Power Source (Wall Adapter)
      3. 10.3.3 Dual-Port A/C Power Source (Wall Adaptor)
      4. 10.3.4 D/C Power Source (Power Hub with 3.3 V Rail)
  11. 11Power Supply Recommendations
    1. 11.1 VDD
    2. 11.2 VPWR
  12. 12Layout
    1. 12.1 Port Current Kelvin Sensing
    2. 12.2 Layout Guidelines
      1. 12.2.1 Power Pin Bypass Capacitors
      2. 12.2.2 Supporting Components
    3. 12.3 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 ドキュメントのサポート
    2. 13.2 ドキュメントの更新通知を受け取る方法
    3. 13.3 コミュニティ・リソース
    4. 13.4 商標
    5. 13.5 静電気放電に関する注意事項
    6. 13.6 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

ESD Ratings(3)

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
IEC (4) 61000-4-2 contact discharge, CC1, CC2 ±8000
IEC (4) 61000-4-2 air-gap discharge, CC1, CC2 ±15000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
These results were passing limits that were obtained on an application-level test board. Individual results may vary based on implementation. Surges per IEC61000-4-2, 1999 applied between CC1/CC2 and ground of TPS25740BEVM-741 and TPS25740BEVM-741