SLAAET8A April 2025 – December 2025 MSPM0C1103 , MSPM0C1103-Q1 , MSPM0C1104 , MSPM0C1104-Q1 , MSPM0C1105 , MSPM0C1106 , MSPM0C1106-Q1 , MSPM0G1105 , MSPM0G1106 , MSPM0G1107 , MSPM0G1505 , MSPM0G1506 , MSPM0G1507 , MSPM0G1518 , MSPM0G1519 , MSPM0G3105 , MSPM0G3105-Q1 , MSPM0G3106 , MSPM0G3106-Q1 , MSPM0G3107 , MSPM0G3107-Q1 , MSPM0G3505 , MSPM0G3505-Q1 , MSPM0G3506 , MSPM0G3506-Q1 , MSPM0G3507 , MSPM0G3507-Q1 , MSPM0G3518 , MSPM0G3518-Q1 , MSPM0G3519 , MSPM0G3519-Q1 , MSPM0G3529-Q1 , MSPM0H3216 , MSPM0H3216-Q1 , MSPM0L1105 , MSPM0L1106 , MSPM0L1116 , MSPM0L1117 , MSPM0L1227 , MSPM0L1227-Q1 , MSPM0L1228 , MSPM0L1228-Q1 , MSPM0L1303 , MSPM0L1304 , MSPM0L1304-Q1 , MSPM0L1305 , MSPM0L1305-Q1 , MSPM0L1306 , MSPM0L1306-Q1 , MSPM0L1343 , MSPM0L1344 , MSPM0L1345 , MSPM0L1346 , MSPM0L2227 , MSPM0L2227-Q1 , MSPM0L2228 , MSPM0L2228-Q1
Microcontroller input and output circuitry has been designed to take ESD and latch-up problems into account. However, self-protection is limited, especially when exposed to illegal voltages and high-current injections in EMS tests. TI strongly recommends to implement additional hardware protection if the features below do not work or the IO configuration cannot be satisfied.
Figure 4-3 shows the I/O structure in MSPM0. There are two possible routes to dissipate the energy from illegal voltages and high-current injections. The first and the default route is the two ESD diodes. The second is the P-channel Metal-Oxide-Semiconductor (PMOS) and N-channel Metal-Oxide-Semiconductor (NMOS) near the ESD diodes.
The ESD diodes are triggered if a signal is applied that exceeds maximum input voltage range (-0.3V ≃ VCC+0.3V). The ESD diodes can withstand instantaneous ampere-level currents generated during typical electrostatic discharge events (per HBM or CDM standards). This ESD structure is also helpful to defend the illegal voltages and high-current injections in EMS tests.
For full featured IOs, with the output driver logic control, the PMOS and NMOS can also be a path to release the electrical stress. However, for open-drain IOs, the pull-up clamping diode and the PMOS do not exist yet. When the positive electrical stress happens, there is no route to release. The suggestions with different I/O settings are shown in Table 4-3.
| IO Type | IO Setting | IO Status | Influence | EMS Protection |
|---|---|---|---|---|
| General IO | GPIO output and peripheral output (for example, UART) | Output mode | MOS and ESD structure release EMC noise | Best protection |
Default setting and analog functions | Hiz mode | ESD structure release EMC noise | Good protection | |
GPIO Input And Peripheral Input (for example, UART) | Input mode | ESD structure release EMC noise Can introduce noise into MCU internal circuit | Good Protection | |
| Open-drain IO | GPIO and peripheral output | Output mode | No route to dissipate the positive energy | Risk for positive noise and can need external protection |
Default setting and analog functions | Hiz mode | No route to dissipate the positive energy | Risk for positive noise and can need external protection | |
GPIO input/ peripheral input (for example, UART) | Input mode | No route to dissipate the positive energy | Risk for positive noise and can need external protection |