SLUAAH0 February   2022 UCC14130-Q1 , UCC14131-Q1 , UCC14140-Q1 , UCC14141-Q1 , UCC14240-Q1 , UCC14241-Q1 , UCC14340-Q1 , UCC14341-Q1 , UCC15240-Q1 , UCC15241-Q1

 

  1.   Trademarks
  2. 1 Introduction
    1. 1.1 Pin Configuration and Functions
  3. 2 Three-Phase Traction Inverter
  4. 3 Gate Drive Bias Requirements
    1. 3.1 Gate Drive Bias Architectures
    2. 3.2 IGBT vs. SiC
    3. 3.3 Determining Required Bias Supply Power
    4. 3.4 Input Voltage Requirements
    5. 3.5 Output Voltage Requirements
  5. 4 Single Positive Isolated Output Voltage
  6. 5 Dual Positive and Negative Output Voltages
  7. 6 Dual Positive Output Voltages
  8. 7 Capacitor Selection
  9. 8 RLIM Current Limit Resistor
    1. 8.1 RLIM Functional Description
    2. 8.2 RLIM Dual Output Configuration
      1. 8.2.1 CVEE Above Nominal Value CVDD Below Nominal Value
      2. 8.2.2 CVEE Below Nominal Value CVDD Above Nominal Value
      3. 8.2.3 Gate Driver Quiescent Current: IQ_VEE > IQ_VDD
      4. 8.2.4 Gate Driver Quiescent Current: IQ_VEE < IQ_VDD
      5. 8.2.5 CVEE Above Nominal Value CVDD Below Nominal Value: IQ_VEE > IQ_VDD
      6. 8.2.6 CVEE Below Nominal Value CVDD Above Nominal Value: IQ_VEE < IQ_VDD
    3. 8.3 RLIM Single Output Configuration
  10. 9 UCC14240-Q1 Excel Design Calculator Tool
  11. 10Thermal Considerations
    1. 10.1 Thermal Resistance
    2. 10.2 Junction-to-Top Thermal Characterization Parameter
    3. 10.3 Thermal Measurement and TJ Calculation Example
  12. 11Enable (ENA) and Power Good (/PG)
  13. 12PCB Layout Considerations
  14. 13Reference Design Example
  15. 14Summary
  16. 15References

3 Gate Drive Bias Requirements

Traction inverters have unique gate drive bias architectures based on required levels of safety, isolation, fault detection, reliability and load. The load seen by the gate drivers consists of SiC MOSFETs or IGBTs arranged in a half-bridge, three-phase configuration. Since there are three phases to consider, this means there are three half-bridge arrangements that must be properly isolated and biased. SiC and IGBT switches are favored over Si MOSFETs because of their superior HV, dynamic switching characteristics, current handling capability and high temperature rating.

This section will consider the impact of the following, from an isolated bias supply point of view: gate drive bias architectures, IGBT vs SiC requirements, determining required bias supply power, input voltage requirements and output voltage regulation requirements.