SNOU150D January   2018  – April 2025 LMG1020

 

  1.   1
  2. 1 Introduction
  3. 2 Description
    1. 2.1 Typical Applications
    2. 2.2 Features
  4. 3 General TI High Voltage Evaluation User Safety Guidelines
  5. 4 Safety and Precautions
  6. 5 Electrical Performance Specifications
  7. 6 EVM Operation Out-of-the-Box
  8. 7 EVM Schematic
  9. 8 EVM Kit Contents
  10. 9 Test Setup
    1. 9.1 Test Equipment
    2. 9.2 Recommended Test Setup
    3. 9.3 List of Test Points
    4. 9.4 List of Terminals
  11. 10Test Procedure
    1. 10.1 Nanosecond Pulse Measurements
    2. 10.2 Pulse Shortener
    3. 10.3 Shutdown Procedure
      1. 10.3.1 Components rating and DNPs
  12. 11Performance Data and Typical Characteristics
  13. 12EVM Assembly Drawing and PCB Layout
  14. 13List of Materials
  15. 14Trademarks
  16. 15Revision History

1 Introduction

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-frequency applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The LMG1020EVM-006 is designed to evaluate the LMG1020. This EVM consists of one Gallium Nitride (GaN) enhancement mode FET driven by one LMG1020 and the drain of the GaN FET is connected to an unpopulated resistive load representing a typical laser diode load for LiDAR (Light Detection And Ranging) applications.

This User's Guide shows a circuit and the list of materials describing how to power the board up and how to configure the board. The EVM is designed to accelerate the evaluation of the LMG1020.

This EVM is not intended to be used as a standalone product but is intended to evaluate the switching performance of LMG1020.

This User's Guide describes correct operation and measurement of the EVM, as well as the EVM construction and typical performance.