SBOSAN2A August   2025  – December 2025 PGA854

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Gain Control
      2. 7.3.2 Input Protection
      3. 7.3.3 Output Common-Mode Pin
      4. 7.3.4 Using the Fully Differential Output Amplifier to Shape Noise
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Linear Operating Input Range
      2. 8.1.2 Current Consumption with Differential Inputs
    2. 8.2 Typical Application
      1. 8.2.1 ADS127L11 and ADS127L21B, 24-Bit, Delta-Sigma ADC Driver Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 PSpice® for TI
        2. 9.1.1.2 TINA-TI™ Simulation Software (Free Download)
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) PGA854 UNIT
RGT (VQFN)
16 PINS
RθJA Junction-to-ambient thermal resistance 47.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 53.6 °C/W
RθJB Junction-to-board thermal resistance 22.0 °C/W
ψJT Junction-to-top characterization parameter 1.4 °C/W
ψJB Junction-to-board characterization parameter 22.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 7.8 °C/W
(1) For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.