SGLS154F November   2000  – September 2025 TLV3701-Q1 , TLV3702-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Configuration: TLV3701
    2.     Pin Configurations: TLV3702
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Dissipation Rating Table
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Electrical Characteristics
    5. 6.5 Switching Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Inputs
        1. 7.4.1.1 Operating Common-Mode Ranges
        2. 7.4.1.2 Fail-Safe Inputs
        3. 7.4.1.3 Unused Inputs
      2. 7.4.2 Internal Hysteresis
      3. 7.4.3 Outputs
        1. 7.4.3.1 Push-Pull Output
      4. 7.4.4 ESD Protection
        1. 7.4.4.1 Inputs
        2. 7.4.4.2 Outputs
      5. 7.4.5 Power-On Reset (POR)
      6. 7.4.6 Reverse Battery Protection
  9. Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Electrostatic Discharge Caution
    4. 8.4 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Internal Hysteresis

The device hysteresis transfer curve is shown in Figure 7-2. This curve is a function of three components: VTH, VOS, and VHYST:

  • VTH is the actual set voltage or threshold trip voltage.
  • VOS is the internal offset voltage between VIN+ and VIN–. This voltage is added to VTH to form the actual trip point at which the comparator must respond to change output states.
  • VHYST is the internal hysteresis (or trip window) that is designed to reduce comparator sensitivity to noise.

TLV3701-Q1 TLV3702-Q1 Hysteresis Transfer CurveFigure 7-2 Hysteresis Transfer Curve