SLUSFX8 September 2026 UCC218302-Q1
PRODUCTION DATA
When detecting a DESAT fault, the UCC218302-Q1 initiates a soft shutdown (SSD) to protect the power semiconductor device. When an overcurrent or short circuit event occurs, the SSD feature slowly discharges the gate voltage to limit the overshoot voltage on the switching device created by high dI/dt due to the channel current. A tradeoff occurs between the overshoot voltage and the short-circuit energy. The turn-off speed must be slow enough to limit the overshoot voltage, but the shutdown time must not be too long that the large energy dissipation in the device can cause breakdown. The UCC218302-Q1 provides an internal pulldown FET that can be used with an external resistor to optimize the discharge current of the gate. When a DESAT fault is detected, OUTHx and OUTLx are Hi-Z so that the gate is not driven by the main driver outputs. The internal pulldown MOSFET on the SSD pin turns on for tSSD to let the gate discharge. After this time, CLMPI and OUTLx are driven low to hold the power semiconductor device off. Figure 6-11 shows a simplified block diagram and Figure 6-10 shows a timing diagrams.