SLVK198A July   2025  – August 2025 TPS7H3014-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. Depth, Range, and LETEFF Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A References
  15.   B Revision History

Device and Test Board Information

The TPS7H3014-SEP is packaged in a 24-pin TSSOP plastic package as shown in Figure 3-1. The TPS7H3014-SEP evaluation module was used to evaluate the performance and characteristics of the TPS7H3014-SEP under heavy ion radiation. The TPS7H3014EVM (Evaluation Module) is shown in Figure 3-2. The actual EVM BOM was modified from the original (or default) to set the ENX to SENSEX resistor divider to the correct values to attain the desired overdrive voltage on SENSEX. Two different configurations were used during the heavy-ions test campaign, the details are provided on Figure 3-3 and Figure 3-4.

TPS7H3014-SEP Photograph of Delidded TPS7H3014-SEP [Left] and Pinout Diagram [Right]Figure 3-1 Photograph of Delidded TPS7H3014-SEP [Left] and Pinout Diagram [Right]
Note: The package was delidded to reveal the die face for all heavy-ion testing.
TPS7H3014-SEP TPS7H3014-SEP EVM Top ViewFigure 3-2 TPS7H3014-SEP EVM Top View
TPS7H3014-SEP TPS7H3014-SEP EVM Schematic for DSEE TestingFigure 3-3 TPS7H3014-SEP EVM Schematic for DSEE Testing
TPS7H3014-SEP TPS7H3014-SEP EVM Schematic for SET TestingFigure 3-4 TPS7H3014-SEP EVM Schematic for SET Testing