SLVK198A July 2025 – August 2025 TPS7H3014-SEP
- 1
- 2
- Trademarks
- 1 Introduction
- 2 Single-Event Effects (SEE)
- 3 Device and Test Board Information
- 4 Irradiation Facility and Setup
- 5 Depth, Range, and LETEFF Calculation
- 6 Test Setup and Procedures
- 7 Destructive Single-Event Effects (DSEE)
- 8 Single-Event Transients (SET)
- 9 Event Rate Calculations
- 10Summary
- A References
- B Revision History
7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
During SEB/SEGR testing, the device was tested at room temperature. The same test conditions, in terms of biasing and voltage levels, apply for SEB/SEGR as was used during the SEL testing. In the case of the SEB/SEGR the device was tested in the following state machine states:
- Waiting to Sequence UP
- All outputs are low (ENX = LOW, SEQ_DONE = LOW, and PWRGD = LOW)
- The device is waiting for a rising edge in UP to start the sequence up.
- VUP = 0V (only difference from the SEL biasing)
- Waiting to Sequence DOWN
- All outputs are high (ENX = HIGH, SEQ_DONE = HIGH, and PWRGD = HIGH)
- The device is waiting for a falling edge on DOWN to start a sequence down.
For more configuration information, please refer to Table 6-1.
The results for ten runs across five devices for SEBX are shown in Table 8-3. During the testing of the 5 production devices and 10 SEB/SEGR runs, there were no SEB/SEGR events observed, indicating the TPS7H3014-SEP is SEB/SEGR free at 48 MeV·cm2/mg. Typical VIN current vs time plots for SEB/SEGR on and off runs are shown in Figure 7-2 and Figure 7-3.
| RUN # | UNIT # | FACILITY | ION | LETEFF (MeV·cm2/mg) | FLUX (ions·cm2/mg·s) | FLUENCE (ions·cm2/mg) | ON/OFF STATUS | SEB EVENT? |
|---|---|---|---|---|---|---|---|---|
4 | 1 | TAMU | 109Ag | 48 | 9.92 × 104 | 1.00 × 107 | On | No |
5 | 1 | TAMU | 109Ag | 48 | 1.23 × 105 | 1.00 × 107 | Off | No |
6 | 2 | TAMU | 109Ag | 48 | 1.33 × 105 | 1.00 × 107 | On | No |
7 | 2 | TAMU | 109Ag | 48 | 1.21 × 105 | 1.00 × 107 | Off | No |
8 | 3 | TAMU | 109Ag | 48 | 1.39 × 105 | 1.00 × 107 | On | No |
9 | 3 | TAMU | 109Ag | 48 | 1.45 × 105 | 1.00 × 107 | Off | No |
16 | 6 | KSEE | 109Ag | 49.3 | 1.15 × 105 | 1.00 × 107 | On | No |
17 | 6 | KSEE | 109Ag | 49.3 | 1.12 × 105 | 1.00 × 107 | Off | No |
18 | 7 | KSEE | 109Ag | 49.3 | 1.03 × 105 | 1.00 × 107 | On | No |
19 | 7 | KSEE | 109Ag | 49.3 | 1.09 × 105 | 1.00 × 107 | Off | No |
Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:
σSEB ≤ 3.69 × 10–8 cm2/device for LETEFF = 48 MeV·cm2/mg and T = 25°C.
