SLVSI46 July 2025 DRV8818A
ADVANCE INFORMATION
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| POWER SUPPLIES | ||||||
| IVM | VM operating supply current | VM = 35V, fPWM < 50kHz | 7 | 10 | mA | |
| IVCC | VCC operating supply current | fPWM < 50kHz | 0.4 | 4 | mA | |
| IVMQ | VM sleep mode supply current | VM = 35V | 3 | 20 | μA | |
| IVCCQ | VCC sleep mode supply current | 0.5 | 20 | μA | ||
| VUVLO | VM undervoltage lockout voltage | VM rising | 6.7 | 7.5 | V | |
| VCC undervoltage lockout voltage | VCC rising | 2.75 | 2.95 | |||
| VREF INPUT/CURRENT CONTROL ACCURACY | ||||||
| IREF | VREF input current | VREF = 3.3V | -3 | 3 | μA | |
| ΔICHOP | Chopping current accuracy | VREF = 2.0V, 70% to 100% current | -5 | 5 | % | |
| VREF = 2.0V, 20% to 56% current | -10 | 10 | ||||
| LOGIC-LEVEL INPUTS | ||||||
| VIL | Input low voltage | 0.3 × VCC | V | |||
| VIH | Input high voltage | 0.7 × VCC | V | |||
| VHYS | Input hysteresis | 300 | mV | |||
| IIL | Input low current | VIN = 0.3 × VCC | -20 | 20 | µA | |
| IIH | Input high current | VIN = 0.7 × VCC, all CONTROL pins except SLEEPn | -20 | 20 | µA | |
| IIH_SLEEPn | Input high current on SLEEPn pin | VIN = 0.7 × VCC, SLEEPn pin | -60 | 60 | µA | |
| RPU | Pullup resistance | ENABLEn, RESETn | 1 | MΩ | ||
| RPD | Pulldown resistance | DIR, STEP, USM1, USM0, SRn | 1 | MΩ | ||
| RPD_SLEEPn | Pulldown resistance on SLEEPn pin | SLEEPn | 100 | kΩ | ||
| HOMEn OUTPUT | ||||||
| VOL | Output low voltage | IO = 200μA | 0.3 × VCC | V | ||
| VOH | Output high voltage | IO = -200μA | 0.7 × VCC | V | ||
| DECAY INPUT | ||||||
| VIL | Input low threshold voltage | For fast decay mode | 0.21 × VCC | V | ||
| VIH | Input high threshold voltage | For slow decay mode | 0.6 × VCC | V | ||
| H-BRIDGE FETS | ||||||
| RDS(onH) | High-side MOSFET on resistance | TA = 25°C, VVM = 24V, IO = 2.5A | 180 | 300 | mΩ | |
| TA = 85°C, VVM = 24V, IO = 2.5A | 220 | |||||
| TA = 150°C, VVM = 24V, IO = 2.5A | 280 | |||||
| RDS(onL) | Low-side MOSFET on resistance | TA = 25°C, VVM = 24V, IO = 2.5A | 130 | 210 | mΩ | |
| TA = 85°C, VVM = 24V, IO = 2.5A | 160 | |||||
| TA = 150°C, VVM = 24V, IO = 2.5A | 190 | |||||
| ILEAK | Output leakage current to ground in Disable mode | VVM = 35V, OUTx = GND | 4400 | μA | ||
| tOFF | PWM off-time | Rx = 56kΩ, Cx = 680pF | 31 | 40 | 49 | μs |
| PWM off-time in Smart Tune Dynamic Decay mode | RCA = GND, RCB = GND | 32 | μs | |||
| RCA = GND, RCB = High-Z | 16 | |||||
| tBLANK | Pulse duration, STEP high | Rx = 56kΩ, Cx = 680pF | 800 | 1000 | 1300 | ns |
| tDT | Dead time | SRN = 0 | 50 | 475 | 800 | ns |
| tR | Rise time | 10 | 80 | ns | ||
| tF | Fall time | 10 | 80 | ns | ||
| PROTECTION CIRCUITS | ||||||
| TTSD | Thermal shutdown temperature | Die temperature | 150 | 160 | 180 | °C |
| IOCP | OCP protection level | 3.5 | A | |||
| tOCP | OCP deglitch time | 1.5 | µs | |||
| tRETRY | OCP retry time | 800 | µs | |||