SLVSIB0 December   2025 UCD91320

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Linearity Parameters
    7. 5.7 POR and BOR
    8. 5.8 Low Frequency Crystal/Clock
    9. 5.9 Flash Memory Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Feature Description
      1. 6.2.1 TI Sequencer Studio Software
      2. 6.2.2 PMBUS Interface
      3. 6.2.3 PMBUS Security
    3. 6.3 Device Functional Modes
      1. 6.3.1 Black Box Fault Logging
      2. 6.3.2 PMBus Address Selection
      3. 6.3.3 Brownout
    4.     Failure Analysis and Returns
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.9 Flash Memory Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply
IDDERASE Supply current from VDD during erase operation Supply current delta 10 mA
IDDPGM Supply current from VDD during program operation Supply current delta 10 mA
Endurance
NWEC Erase/program cycle endurance 10 k cycles
NE(MAX) Total erase operations before failure (1) 802 k erase operations
Retention
tRET_85 Flash memory data retention -40°C <= Tj <= 85°C 60 years
tRET_105 Flash memory data retention -40°C <= Tj <= 105°C 11.4 years
tRET_130 Flash memory data retention -40°C <= Tj <= 130°C 2.4 years

Fault and Event Logging

NF

Total number of fault event records before failure

64

Million event logs
(1) Total number of cumulative erase operations supported by the flash before failure. A sector erase or bank erase operation is considered to be one erase operation.