SLVSL52 September   2026 XTR100

ADVMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 ESD Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Zero-Drift Clocking
      2. 7.1.2 Basic Functionality in Loop-Powered Transmitters
      3. 7.1.3 Current Consumption
      4. 7.1.4 System Error Estimation
    2. 7.2 Typical Applications
      1. 7.2.1 XTR100 4mA – 20mA Transmitter
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
      2. 7.2.2 XTR100 4mA – 20mA Low Voltage Transmitter
      3. 7.2.3 XTR100 Precision Divider and Adder
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 PSpice® for TI
        2. 8.1.1.2 TINA-TI™ Simulation Software (Free Download)
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

7.1.3 Current Consumption

Low current consumption is an essential requirement for sensor transmitters, especially at the lowest output current level of 4mA. Note that the current consumption of XTR100 and XTR102 has three components:

  1. The quiescent current of the amplifier running through V+ to V−. XTR1xx has typical IQ of 40μA, and maximum IQ over temperature range is 52μA.
  2. The input current I1, which is 10μA for nominal 4mA output and R2 = 24.9Ω, and can reach 11.5μA over process variation of R1, and is running through INP to L−.
  3. The Q1 base current, which depends on hFE of Q1, for a typical value of hFE = 100, base current is 40μA, and for hFE = 60, the base current increases to 66μA. The Q1 base current flows through V+ to OUT. Note that hFE typically increases with higher temperature, hence decreasing base current at high temperatures in contrast to IQ which increases with increased temperature.
The current consumption of the driver then is 90μA in the typical case. For all practical scenarios, the current consumption of the driver will remain below 100μA.

XTR120 has an extra 40μA quiescent current in addition to that of XTR100.