SLVSNG2 August   2026 DRV8378-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings AUTO
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 SPI Mode Timings
  8. 7 Detailed Description
    1. 7.1  Overview
    2. 7.2  Functional Block Diagram
    3. 7.3  Feature Description
      1. 7.3.1 Output Stage
      2. 7.3.2 Device Interface Modes
        1. 7.3.2.1 Serial Peripheral Interface (SPI)
        2. 7.3.2.2 Hardware Interface
      3. 7.3.3 Control Modes
        1. 7.3.3.1 3x PWM Mode (PWM_MODE = 10b or 11b or MODE_SR Pin is Connected to GVDD with RMODE or to GVDD)
        2. 7.3.3.2 6x PWM Mode (PWM_MODE = 00b or 01b or MODE_SR Pin Tied to AGND or in Hi-Z)
        3. 7.3.3.3 DRV8378G Control mode with External GVDD
      4. 7.3.4 GVDD Linear Voltage Regulator
      5. 7.3.5 Charge Pump
    4. 7.4  Slew Rate Control
    5. 7.5  Cross Conduction (Dead Time)
    6. 7.6  Propagation Delay
    7. 7.7  Pin Diagrams
      1. 7.7.1 Logic Level Input Pin (Internal Pulldown)
      2. 7.7.2 Logic Level Input Pin (Internal Pullup)
      3. 7.7.3 Open Drain Pin
      4. 7.7.4 Push Pull Pin
    8. 7.8  Current Sense Amplifiers
      1. 7.8.1 Current Sense Amplifier Operation (29-pin variant)
    9. 7.9  Active Demagnetization
      1. 7.9.1 Automatic Synchronous Rectification Mode (ASR Mode)
        1. 7.9.1.1 Automatic Synchronous Rectification in Commutation
        2. 7.9.1.2 Automatic Synchronous Rectification in PWM Mode
      2. 7.9.2 Automatic Asynchronous Rectification Mode (AAR Mode)
    10. 7.10 Cycle-by-Cycle Current Limit
      1. 7.10.1 Cycle by Cycle Current Limit with 100% Duty Cycle Input
    11. 7.11 Protections
      1. 7.11.1 Overcurrent Protection (OCP)
        1. 7.11.1.1 OCP Latched Shutdown (OCP_MODE = 00b)
        2. 7.11.1.2 OCP Automatic Retry (OCP_MODE = 01b)
        3. 7.11.1.3 OCP Disabled (OCP_MODE = 11b)
        4. 7.11.1.4 OCP Report Only (OCP_MODE = 10b)
      2. 7.11.2 VM Supply Undervoltage Lockout (RESET)
      3. 7.11.3 GVDD Undervoltage Lockout (GVDD_UV)
      4. 7.11.4 VCP Charge Pump Undervoltage Lockout (CPUV)
      5. 7.11.5 Over Voltage Protections (OV)
      6. 7.11.6 Thermal Warning (OTW)
      7. 7.11.7 Thermal Shutdown (OTS)
    12. 7.12 Device Functional Modes
      1. 7.12.1 Functional Modes
        1. 7.12.1.1 Sleep Mode
        2. 7.12.1.2 Operating Mode
        3. 7.12.1.3 Fault Reset (CLR_FLT or nSLEEP Reset Pulse)
      2. 7.12.2 DRVOFF functionality
    13. 7.13 SPI Communication
      1. 7.13.1 Programming
        1. 7.13.1.1 SPI Format
  9. 8 Register Map
    1. 8.1 CONTROL Registers
    2. 8.2 STATUS Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Power Supply Recommendations
      1. 9.2.1 Bulk Capacitance
    3. 9.3 Layout
      1. 9.3.1 Layout Guidelines
      2. 9.3.2 Layout Example
      3. 9.3.3 Thermal Considerations
        1. 9.3.3.1 Power Dissipation
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1.     PACKAGE OPTION ADDENDUM
    2. 11.1 Tape and Reel Information

9.3.1 Layout Guidelines

The bulk capacitor must be placed to minimize the distance of the high-current path through the motor driver device. The connecting metal trace widths must be as wide as possible, and numerous vias must be used when connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high current. Small-value capacitors such as the charge pump, GVDD, and VREF capacitors must be ceramic and placed closely to device pins. The high-current device outputs must use wide metal traces.

To reduce noise coupling and EMI interference from large transient currents into small-current signal paths, grounding must be partitioned between PGND and AGND. TI recommends connecting all non-power stage circuitry to AGND to reduce parasitic effects and improve power dissipation from the device. Maintain grounds are connected through net-ties or wide resistors to reduce voltage offsets and maintain gate driver performance. TI recommends to have vias on the PGND pads for better thermal efficiency and run a solid PGND plane underneath the device. Multiple vias must be used to connect to a large bottom-layer ground plane. The use of large metal planes and multiple vias helps dissipate the I2 × RDS(on) heat that is generated in the device.

To improve thermal performance, maximize the ground area that is connected to the thermal pad ground across all possible layers of the PCB. Using thick copper pours can lower the junction-to-air thermal resistance and improve thermal dissipation from the die surface.