SNAS856A September   2024  – March 2025 REF80

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Heater
      2. 7.3.2 Buried Zener Reference
  9. Parameter Measurement Information
    1. 8.1 Long-Term Stability
    2. 8.2 Temperature Drift
    3. 8.3 Thermal Hysteresis
    4. 8.4 Noise Performance
      1. 8.4.1 1/f Noise
      2. 8.4.2 Broadband Noise
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application: Basic Voltage Reference Connection
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Typical Application Circuits
        1. 9.2.2.1 Precision Voltage Divider Connection
        2. 9.2.2.2 Calibration Signal
    3. 9.3 Power Supply Recommendation
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Electrostatic Discharge Caution

REF80 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.