SNAS856A September   2024  – March 2025 REF80

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Heater
      2. 7.3.2 Buried Zener Reference
  9. 8 Parameter Measurement Information
    1. 8.1 Long-Term Stability
    2. 8.2 Temperature Drift
    3. 8.3 Thermal Hysteresis
    4. 8.4 Noise Performance
      1. 8.4.1 1/f Noise
      2. 8.4.2 Broadband Noise
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application: Basic Voltage Reference Connection
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Typical Application Circuits
        1. 9.2.2.1 Precision Voltage Divider Connection
        2. 9.2.2.2 Calibration Signal
    3. 9.3 Power Supply Recommendation
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.3 Thermal Information

THERMAL METRIC(1) REF80 UNIT
NAJ (LCCC)
20 PINS
1s0p JEDEC REF8EVM
RθJA Junction-to-ambient thermal resistance 103.6 141.9 °C/W
RθJB Junction-to-board thermal resistance 45.1 55.8 °C/W
ΨJT Junction-to-top characterization parameter 38.3 39.2 °C/W
ΨJB Junction-to-board characterization parameter 45.1 55.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.