SNIS118I July   1999  – October 2025 LM50 , LM50HV

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: LM50 (LM50B and LM50C)
    6. 6.6 Electrical Characteristics: LM50HV
    7. 6.7 Typical Characteristics (LM50B and LM50C)
    8. 6.8 Typical Characteristics (LM50HV)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 LM50 and LM50HVTransfer Function
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Full-Range Centigrade Temperature Sensor
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Capacitive Bypass and Loads
          2. 8.2.1.2.2 LM50HV Self-heating
        3. 8.2.1.3 Application Curve
    3. 8.3 System Examples
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
      3. 8.5.3 Thermal Considerations
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1.      Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics: LM50 (LM50B and LM50C)

LM50: +VS = 5V (DC) and ILOAD = 0.5µA, TA = TJ = 25°C (unless otherwise noted)(1)
LM50B (Legacy chip only): TA =  TMIN to TMAX = -25°C to 100°C
LM50B (New chip) and LM50C (Both New and Legacy chip): TA =  TMIN to TMAX = -40°C to 125°C 

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SENSOR ACCURACY
TACY Temperature accuracy(2) TA = 25°C LM50B
(Legacy chip)		 -2 2 °C
TA = TMAX = 100°C -3 3
TA = TMIN = -25°C -3.5 3
TA = 25°C LM50B
(New chip)		 -2 2 °C
TA = TMAX = 125°C -3 3
TA = TMIN = -40°C -3.5 3
TA = 25°C LM50C -3 3 °C
TA = TMAX = 125°C -4 4
TA = TMIN = -40°C -4 4
SENSOR OUTPUT
V0°C Output voltage offset at 0°C 500 mV
TC Temperature coefficient (sensor gain) TA = TJ = TMIN to TMAX 9.7 10 10.3
mV/°C
VONL Output Nonlinearity(3) TA = TJ = TMIN to TMAX LM50 -0.8 0.8 °C
ZOUT Output impedance TA = TJ = TMIN to TMAX 2000 4000 Ω
TON Turn-On Time LM50 (Legacy chip) 5 µs
LM50 (New chip) 30
TLTD Long-term stability and drift(4) TJ = 125°C for 1000 hours LM50 ±0.08 °C
POWER SUPPLY
IDD Operating current TA =  TMIN to TMAX
4.5V ≤ +VS ≤ 10V		 LM50 (Legacy chip) 95 180 μA
LM50 (New chip) 52 90
PSR Line regulation(5) TA =  TMIN to TMAX
4.5V ≤ +VS ≤ 10V		 LM50 -1.2 1.2 mV/V
ΔIDD Change of quiescent current TA =  TMIN to TMAX
4.5V ≤ +VS ≤ 10V		 LM50 (Legacy chip) 2 μA
LM50 (New chip) 8
IDD_TEMP Temperature coefficient of quiescent current TA =  TMIN to TMAX
4.5V ≤ +VS ≤ 10V		 LM50B 1 μA/°C
LM50C 2
(1) Limits are specified to TI's AOQL (Average Outgoing Quality Level).
(2) Accuracy is defined as the error between the output voltage and 10mv/°C multiplied by case temperature of the device plus 500mV, at specified conditions of voltage, current, and temperature (expressed in °C).
(3) Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the rated temperature range of the device.
(4) For best long-term stability, any precision circuit provides best results if the unit is aged at a warm temperature, and/or temperature cycled for at least 46 hours before long-term life test begins. This is especially true when a small (Surface-Mount) part is wave-soldered; allow time for stress relaxation to occur. The majority of the drift occurs in the first 1000 hours at elevated temperatures. The drift after 1000 hours does not continue at the first 1000 hour rate.
(5) Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance.