SNIS118I July   1999  – October 2025 LM50 , LM50HV

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: LM50 (LM50B and LM50C)
    6. 6.6 Electrical Characteristics: LM50HV
    7. 6.7 Typical Characteristics (LM50B and LM50C)
    8. 6.8 Typical Characteristics (LM50HV)
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 LM50 and LM50HVTransfer Function
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Full-Range Centigrade Temperature Sensor
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Capacitive Bypass and Loads
          2. 8.2.1.2.2 LM50HV Self-heating
        3. 8.2.1.3 Application Curve
    3. 8.3 System Examples
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
      3. 8.5.3 Thermal Considerations
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1.      Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Electrical Characteristics: LM50HV

LM50HV: +VS = 3V to 36V (DC) and no ILOAD, TA = -40°C to 150°C (unless otherwise noted); Typical specifications are at TA = 25°C and +VS = 5V (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SENSOR ACCURACY
TACY Temperature accuracy(2) TA = 25°C LM50HV ±1 °C
TA = 20°C to 70°C -2 2
TA = -10°C to 125°C -2.5 2.5
TA = -40°C to 125°C -3.5 3.5
TA = -20°C to 150°C,
3.1V ≤ +VS
-3 3
TA = -40°C to 150°C -3.5 3.5
SENSOR OUTPUT
V0°C Output voltage offset at 0°C 500 mV
TC Temperature coefficient (sensor gain) TA = -40°C to 150°C 9.7 10 10.3
mV/°C


VONL Output Nonlinearity(3) TA = -40°C to 150°C -1.2 1.2 °C
ZOUT Output impedance TA = -40°C to 150°C 2000 4000
TON Turn-On Time TA = 25°C, No CLoad, tr = 1µs of +Vstep 40 µs
TLTD Long-term stability and drift(4) TJ = 150°C for 300 hours ±0.25 °C
CLOAD Capacitive load drive RI = 0Ω 1 µF
tRESP_L Response time (Stirred Liquid) τ = 63% for step response
(0.5in × 0.5in, 2-layer 62-mil PCB)
From 22°C to 100°C 1.7 s
tRESP_A Response time (Still Air) From 18°C to 100°C 15.6
POWER SUPPLY
IDD Operating current TA = -40°C to 150°C
3V ≤ +VS ≤ 36V
52 130 μA
IOUT-SC Output short-circuit current limit VO short-circuit source current 1 mA
PSR Line regulation(5) TA = -40°C to 150°C
3V ≤ +VS ≤ 36V
-0.6 0.6 mV/V
PSRR Power supply rejection ratio TA = 25°C
+VS = 3.3V, 5V and 12V
f = 1MHz -25 dB
f = 100kHz -40
ΔIDD Change of quiescent current TA = -40°C to 150°C
3V ≤ +VS ≤ 36V
30 μA
IDD_TEMP Temperature coefficient of quiescent current TA = -40°C to 150°C
3V ≤ +VS ≤ 36V
0.3 μA/°C
VON-TH Turn-on threshold voltage TA = -40°C to 150°C 2.1 2.8 V
VOFF-TH Temperature coefficient of quiescent current TA = -40°C to 150°C 1.7 2.1 V
Limits are specified to TI's AOQL (Average Outgoing Quality Level).
Accuracy is defined as the error between the output voltage and 10mv/°C multiplied by case temperature of the device plus 500mV, at specified conditions of voltage, current, and temperature (expressed in °C).
Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the rated temperature range of the device.
Long term stability and drift is determined using accelerated operational life testing at a junction temperature of 150°C.
Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance.