SNVSCZ9 October   2026 LMR70410

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Fixed Frequency Peak Current Mode Control
      2. 7.3.2 Enable and Undervoltage Lockout
      3. 7.3.3 Soft Start and Recovery From Dropout
      4. 7.3.4 Adjustable Output Voltage
      5. 7.3.5 Minimum ON-Time, Minimum OFF-Time and Frequency Foldback
      6. 7.3.6 Bootstrap Voltage
      7. 7.3.7 Overcurrent and Short-Circuit Protection
      8. 7.3.8 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Active Mode
      3. 7.4.3 CCM Mode
      4. 7.4.4 Light-Load Operation (PFM Version)
      5. 7.4.5 Light-Load Operation (FPWM Version)
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Voltage Setpoint
        2. 8.2.2.2 Switching Frequency
        3. 8.2.2.3 Inductor Selection
        4. 8.2.2.4 Output Capacitor Selection
        5. 8.2.2.5 Input Capacitor Selection
        6. 8.2.2.6 Bootstrap Capacitor
        7. 8.2.2.7 Undervoltage Lockout Setpoint
        8. 8.2.2.8 Replacing Asynchronous Converter
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Compact Layout for EMI Reduction
        2. 8.4.1.2 Feedback Resistors
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Mechanical Data

8.4.1.1 Compact Layout for EMI Reduction

Radiated EMI is generated by the high di/dt components in pulsing currents in switching converters. The larger area covered by the path of a pulsing current, the more EMI is generated. High frequency ceramic bypass capacitors at the input side provide primary path for the high di/dt components of the pulsing current. Placing a ceramic bypass capacitor or capacitors as close as possible to the VIN and GND pins is the key to EMI reduction.

The SW pin connecting to the inductor must be as short as possible, and just wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes) must be used for high current conduction path to minimize parasitic resistance. Place the output capacitors close to the VOUT end of the inductor and closely grounded to GND pin.