Technologies

Gallium nitride (GaN)

Design faster, smaller, and more thermally efficient systems

Gallium nitride (GaN) is a wide band-gap semiconductor that enables faster switching, higher efficiency, and greater power density than traditional silicon solutions. This allows for smaller, lighter designs with improved thermal performance and lower power loss. TI GaN technology supports a broad range of applications, including consumer electronics, data centers, grid and telecom infrastructure, and automotive power electronics, maintaining high performance and reliability.

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Why choose our GaN technology?

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Faster switching speeds, higher efficiency

Our GaN devices with integrated drivers enable faster slew rates of up to 150V/ns. Higher switching speeds, combined with a low-inductance packaging and reduced switching losses, support clean switching, minimize ringing, and improve overall efficiency.

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Smaller systems, higher power density

Reduced switching losses allow our GaN devices to operate at frequencies above 500kHz, resulting in up to 60% smaller magnetics. This helps reduce system size, increase power density and lower overall system cost.

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Built for reliability

Our GaN devices are designed for high-voltage systems reliability, using a proprietary GaN-on-Si process, backed by more than 80 million hours of reliability testing, and supported by robust integrated protection features.

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GaN technology at scale

We produce our complete GaN portfolio across multiple internally owned fabs, ensuring reliable supply and scalable production across industries. Building on our history of GaN innovation, we're successfully delivering customer samples of GaN technology manufactured on 300mm wafers.

Explore our GaN portfolio

Unlock higher power density and efficiency with GaN

As power demands increase, GaN adoption continues to accelerate in next-generation architectures. Our fully integrated GaN power stages combine GaN HEMTs, drivers, protection, and control into a one-chip solution, designed for applications including data centers, server power, solar inverters, industrial systems, automotive and more.

  • Enable high switching frequency up to 1MHz for smaller magnetics and higher power density.
  • Reduce switching losses to improve efficiency and simplify bias circuitary.
  • Integrate driver and protection to simplify design and rerduce loop parasitics.
White paper
Achieving GaN Products With Lifetime Reliability
The white paper demonstrates TI GaN power devices' reliability through comprehensive testing, showing robust performance under hard-switching, dynamic stress, surge events, and real-world power conditions.
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Application brief
Application of GaN FET in Humanoid Robots
Learn how to meet challenging size and heat dissipation requirements when integrating GaN FETs into humanoids while still maintaining the smooth operation of this complex system.
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Reference design
3.6kW, 54V, single-phase, AC-to-DC rectifier reference design with all GaN switches
This design highlights GaN’s role in next-generation data center server power supplies, using totem-pole PFC and LLC conversion to achieve up to 98.9% PFC efficiency and 98.5% LLC efficiency at half load.
Featured products for GaN power stages
LMG3670R010 PREVIEW 650V 10mΩ STOLT-packaged GaN FET with integrated driver
NEW LMG3650R035 ACTIVE 650V 35mΩ TOLL-packaged GaN FET with integrated driver and protection
LMG2100R044 ACTIVE 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection

Improve performance & simplify power supply design

Our AC/DC products with integrated GaN technology are designed for next-generation applications, including adapters, appliances, server power, and chargers. By integrating high-performance GaN HEMTs like in the UCG28826, these solutions deliver industry-leading power density, high efficiency and low standby power.

  • Simplify design and improve efficiency with self-bias and auxless sensing.
  • Reduce BoM cost by integrating high-voltage startup, X-capacitor discharge, and protection features.
  • Support EMC compliances with quasi-resonant switching, burst mode operation, slew rate control.
Technical article
How an auxless GaN flyback converter can solve AC/DC adapter design challenges (Rev. A)
Explore how the UCG28826 integrated GaN flyback converter from TI can help you overcome AC/DC adapter design challenges.
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Video
65W USB-C® charger demonstration with self-biasing GaN flyback
Designed for high efficiency and reliability, our 65W dual USB Type-C® PD charger reference design features UCC28826, the industry’s first self-biasing GaN flyback converter.
Reference design
USB Power Delivery charger with self-biasing GaN flyback converter reference design
65W dual-port USB-PD charger with GaN flyback. 90-264VAC input meets DoE VI & CoC V5 standards with low standby power. UCG28826 eliminates auxiliary windings. 2.3W/cm³ power density.
Featured products for GaN AC/DC converters
NEW UCG28836 ACTIVE Self-biased high-frequency QR flyback converter with integrated GaN (65W) and low standby power
NEW UCG28824 ACTIVE Self-biased high frequency QR flyback converter with integrated GaN (45W)
NEW UCG28828 ACTIVE High Frequency QR Flyback Converter with integrated GaN power FET for up to 120W output with PFC

Buck and boost converters with integrated GaN FETs

Designed for smaller, lighter and more efficient power systems, these solutions reduce traditional trade-offs between size, efficiency and performance. By leveraging advanced GaN technology, engineers can achieve higher performance than is possible with silicon-based designs.

  • Deliver higher power in smaller solution sizes.
  • Achieve high efficiency for demanding high power applications.
  • Simplify design by integrating GaN FETs, controller, drivers, and bootstrap circuit in one package.
Reference design
48V–12V GaN-enabled 2kW four-phase buck converter, 1/4th brick power module reference design
This reference design is a 2kW, high-density, 48V to 12V closed-loop bus converter based on a four-phase buck for enterprise computing. The design achieves > 98% peak efficiency and 97.5% full load efficiency at 48V VIN.
Reference design
3V to 42V synchronous GaN boost converter reference design
The reference design is designed for high boost factor and high efficiency. The design operates over a wide input voltage range, starting from 3V using the LMG5126 boost converter with integrated Gallium Nitride (GaN) FETs.
Featured products for GaN buck and boost converters
NEW LMG708B0 PREVIEW 5V to 80V, 20A synchronous step-down converter with integrated GaN FETs for ultra-high efficiency
NEW LMG5126 ACTIVE 42V VIN, 2.5MHz synchronous GaN boost converter with output voltage tracking

Driver higher efficiency, power density & smooth control

Our integrated GaN motor drivers, including the industry leading GaN intelligent power modules (IPMs), deliver >99% inverter efficiency, improve thermal performance and minimize power loss. For applications like home appliances, robotics, e-bikes, drones and power tools, our GaN drivers provide superior harmonic control for quieter operation, smoother performance, and precise motor control. This reduces system costs, energy consumption, and enables compact designs meeting efficiency requirements.

  • Reduce PCB size by over 50% with integrated GaN half-bridge power stages.
  • Reduce power losses by up to 50% at high switching frequencies (100kHz).
  • Minimize dead time (<150ns) and optimize switching to reduce current distortion for better acoustics.
White paper
How Three-Phase Integrated GaN Technology Maximizes Motor-Drive Performance
Read about GaN design considerations, and learn how GaN increases motor efficiency.
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Video
Efficient GaN IPMs
Design more efficient, compact motor systems with the DRV7308 GaN IPM.
Reference design
48v 1kw robot joint motor control with industrial communication reference design
Industrial Ethernet motor-drive reference design using DRV7167 GaN half-bridges and TI Sitara™ AM261x MCU on a 70mm PCB for humanoid robot joints (48V, 1kW). High power density, real-time control, and system testing in progress.
Featured products for GaN motor drivers
NEW DRV7308 ACTIVE 650V, 205mΩ 3-phase integrated GaN intelligent power module (IPM) with protection and current sense
NEW DRV7167 PREVIEW 100V 70A half-bridge GaN motor driver power stage

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Video

Revolutionizing high-voltage power with TI GaN

Revolutionize your high-voltage system with TI GaN. Watch how our GaN technology enables engineers to reduce time-to-market for high-voltage power conversion designs, while decreasing system cost and environmental impact.

Featured applications


Telecom and server power

Transforming telecom and server power for tomorrow's computing demands

Design telecom and server power systems for storage, cloud and high-performance computing using our GaN devices. These devices help meet demanding efficiency requirements supporting up to 80 PLUS® Titanium standards and enabling power-factor correction (PFC) efficiency above 99%.Enable switching frequencies above 500kHz in isolated DC/DC converters, and reduce magnetics size while minimizing parasitic losses with integrated design


Solar and energy storage

Revolutionize energy storage with unparalleled efficiency and density

Design solar and energy storage systems using GaN devices to achieve smaller, more efficient AC/DC power conversion. GaN enables bidirectional power flow, allowing seamless integration of energy storage into solar inverters and reducing dependence on the grid. These solutions deliver up to 3 times higher power density (>1.2 kW/L) than traditional converters, with 20% better density than SiC FETs through high-frequency GaN switching (140kHz). GaN technology reduces system cost via smaller magnetics and simpler topologies compared to 2-level SiC designs.


Power delivery

Power everyday devices with unmatched performance

Our integrated low-power GaN devices deliver exceptional power density and efficiency benefits to everyday consumer applications including mobile phone and laptop adapters, TV power supply units and USB wall outlets. With system efficiency exceeding 95%, these solutions can reduce consumer AC/DC solution sizes by as much as 50%, while their integrated current sensing capabilities further enhance efficiency and minimize printed circuit board footprint.


OBC and DC/DC converter

Enable high power density in electric vehicles with our GaN technology

The next generation of single-phase AC on-board chargers (OBCs) and high-to-low-voltage DC/DC converters in hybrid-electric (HEV) and electric vehicles (EV) are leveraging GaN power devices to achieve higher switching frequencies and reduce magnetics size, delivering superior power density compared to silicon and SiC-based alternatives. These solutions offerprovide more power than SiC at equivalent volumes, with switching frequencies exceeding 500kHz for CLLLC and 120kHz for PFC, while achieving 96.5% combined system-level efficiency and featuring integrated gate drivers that significantly simplify system-level design.


HVAC and appliances

Realize higher power efficiency and a smaller form factor in motor drives for heating, ventilation and air conditioning (HVAC) and appliances with our GaN devices

Efficient motor drives are essential for appliances and HVAC systems to meet stringent energy standards around the world, and our portfolios of GaN power stages and intelligent power modules (IPMs) deliver higher efficiency compared to IGBTs and MOSFETs, effectively reducing system size and cost. These solutions achieve motor drive power stages with efficiency exceeding 99% through reduced switching losses, while their small size, high integration, and natural cooling capabilities further minimize system dimensions and expenses, all while providing improved acoustics with higher switching frequencies up to 60kHz and lower dead time.

Success stories

Delta powers data centers with TI GaN

"The application of GaN converges with Delta (Electronics') core expertise in high-efficiency power electronics to maximize power density, without giving up efficiency performance. At the end of the day, the GaN technology opens the door to a new world of products that have not been possible." 

Kai Dong | Delta Electronics, R&D Manager of Custom Design Business Unit

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Chicony Power and TI join forces to bring GaN technology to next-generation energy-efficient laptop power adapter

"GaN brings revolutionary changes to power supply designs. Its high-frequency switching characteristics and lower conduction impedance are the determining factors for improving the efficiency and reducing the size of power products, leading to significant reduction in energy consumption and materials used in power products and bringing new opportunities for Chicony Power's green design concepts."

Yang Wang | Chicony Power, VP R&D

View news release

TI's GaN technology and real-time MCUs power LITEON Technology's new server power supply design

"In the development of new generation high-end server power supplies, LITEON responded to the challenge with the best R&D team and the most advanced material technologies. LITEON has achieved an advanced lead and met the energy-saving requirements of data centers by utilizing TI’s GaN solutions." 

Todd Lee |  LITEON Technology, RD Senior Director, Cloud Infrastructure Platform & Solution

View news release

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