GaN: Pushing the limits of power density & efficiency

Design faster, cooler systems with less energy and a smaller footprint

What is gallium nitride (GaN)?

Gallium nitride (GaN) is a wide bandgap semiconductor that enables higher power density and more efficiency than traditional silicon metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). GaN processes power more efficiently than silicon-only solutions, reducing power loss by 80% in power converters and minimizing the need for added cooling components. By packing more power into smaller spaces, GaN lets you design smaller, lighter systems.

GaN vs SIC

GaN vs SiC

While there is some overlap in the power levels that GaN and silicon carbide (SiC) serve, GaN has fundamental characteristics that make it a better fit for applications where high power density is critical, such as server and telecom; <22-kW onboard chargers (OBCs) in electric vehicles (EVs); and <100-W consumer power adapters.

In these applications, GaN devices can achieve switching frequencies of >150 kHz in power factor correction (PFC) topologies and >1 MHz in DC/DC power converters, enabling a significant reduction in the size of magnetics in the system. By enabling higher switching speeds than SiC, GaN technologies help you achieve higher power density at a lower cost.

Learn more about when to choose GaN versus SiC

Advantages of TI GaN technology

checkmark

Faster switching speed than discrete GaN FETs

Our GaN FETs with integrated drivers can reach switching speeds of 150 V/ns. These switching speeds, combined with a low-inductance package, reduce losses, enable clean switching and minimize ringing.

checkmark

Smaller magnetics, higher power density

Enabled by faster switching speeds, our GaN devices can help you achieve switching frequencies over 500 kHz, which results in up to 60% smaller magnetics, enhanced performance and lower system cost.

checkmark

Built for reliability

Our GaN devices are designed to keep high-voltage systems safe, thanks to a proprietary GaN-on-Si process, more than 40 million hours of reliability testing and protection features.

Discover featured applications

Telecom & server power
Reach 80 Plus® Titanium standards with 96.5% total energy efficiency and over 100-W/in^3 power density with TI GaN technology

Reach 80 Plus® Titanium standards with 96.5% total energy efficiency and over 100-W/in^3 power density with TI GaN technology

Design telecom and server systems that support storage, cloud-based applications, central computing power and more using our GaN devices. To help meet your design requirements for energy efficiency, our designs can reach 80® Plus Titanium standards and enable power-factor correction (PFC) efficiencies over 99%.

Benefits

  • >99% efficiency enabled by GaN in a totem-pole bridgeless PFC topology
  • Switching frequencies >500 kHz in isolated DC/DC converters, resulting in decreased magnetics
  • Integrated gate drivers reduce parasitic losses and make system-level design easier

Featured resources

REFERENCE DESIGNS
  • PMP20873 – 99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design
  • TIDA-010062 – 1-kW, 80 Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC reference design
PRODUCTS
  • LMG3422R030 – 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3411R150 – 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection
Solar & energy storage systems
Achieve beyond 1.2-kW/L power density in bidirectional AC/DC power conversion systems with TI GaN technology

Achieve beyond 1.2-kW/L power density in bidirectional AC/DC power conversion systems with TI GaN technology

Develop systems powered by solar and wind energy with our GaN devices, which help you design smaller, more efficient AC/DC inverters and rectifiers and DC/DC inverters. With GaN-enabled bidirectional DC/DC conversion, you can integrate energy storage systems into solar inverters, reducing energy dependency on the grid.

Benefits

  • 3x higher power density (>1.2 kW/L) and lower weight than existing AC/DC and DC/DC converters. 
  • The fast-switching properties of GaN at 140 kHz increase 20% higher power density over SiC FETs
  • System cost parity because of lower-cost magnetics versus 2-level SiC topology

Featured resources

REFERENCE DESIGNS
  • TIDA-010210 – 11-kW, bidirectional, three-phase ANPC based on GaN reference design
PRODUCTS
  • LMG3422R030 – 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3522R030-Q1 – Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
Battery test
Enable higher channel density and reduced AC/DC converter size in battery tester systems with TI GaN technology

Enable higher channel density and reduced AC/DC converter size in battery tester systems with TI GaN technology

Decrease the size of AC/DC power supplies with our GaN FETs with integrated gate drivers. Our GaN devices switch at a higher frequency than MOSFETS and SiC FETs, drastically improving the tester channel density of the test equipment and enabling faster power-supply transient response time.

Benefits

  • >99% efficiency enabled by GaN in a totem-pole bridgeless PFC topology
  • >200-kHz switching frequency in the DC/DC stage, enabling faster charge-to-discharge transition within 1 ms
  • Integrated drivers reduce parasitic losses, enabling easier system-level design

Featured resources

END-EQUIPMENT / SUB-SYSTEM
REFERENCE DESIGNS
  • TIDM-02008 – Bidirectional high density GaN CCM totem pole PFC using C2000™ MCU
  • PMP40690 – 4-kW interleaved CCM totem pole bridgeless PFC reference design using C2000™ MCU and GaN
PRODUCTS
  • LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3410R070 – 600-V 70mΩ GaN with integrated driver and protection
Automotive, OBC & DC/DC converter
Enable high power density in electric vehicles with TI GaN technology

Enable high power density in electric vehicles with TI GaN technology

The next generation of on-board chargers (OBCs) and high-to-low-voltage DC/DC converters in hybrid-electric (HEV) and electric vehicles (EV) are using GaN power devices to switch at higher frequencies and reduce the size of magnetics. This higher switching frequency and reduced size translates to higher power density compared to silicon and SiC-based OBCs. 

Benefits

  • 3.8-kW/L power density, which means more power than SiC at the same volume
  • >500-kHz switching frequency for CLLLC and 120-kHz for PFC 
  • 96.5% combined system-level efficiency 
  • Integrated gate driver simplifies system-level design

Featured resources

PRODUCTS
  • LMG3522R030-Q1 – Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
DESIGN TOOLS AND SIMULATION
  • POWERSTAGE-DESIGNER – Power Stage Designer™ Tool of Most Commonly Used Switch-mode Power Supplies
HVAC & appliances
Realize higher power efficiency and a smaller form factor in PFC power stages for heating, ventilation and air conditioning (HVAC) and appliances with TI GaN devices

Realize higher power efficiency and a smaller form factor in PFC power stages for heating, ventilation and air conditioning (HVAC) and appliances with TI GaN devices

Power-factor correction (PFC) power stages are necessary for heating, ventilating and air conditioning (HVAC) systems to meet new energy standards, like EN6055. GaN power stages, when compared with insulated-gate bipolar transistors (IGBTs), have higher efficiency, which reduces magnetics, heat-sink size and total system cost.

Benefits

  • High switching frequency up to 60 kHz reduces the size of magnetics
  • Reduced switching losses result in power stages with efficiency >99%
  • Small size and the ability to be cooled naturally reduce design size and cost

Featured resources

REFERENCE DESIGNS
  • TIDA-010203 – 4-kW single-phase totem pole PFC reference design with C2000 and GaN
PRODUCTS
  • LMG3422R030 – 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
“The application of GaN converges with Delta (Electronics') core expertise in high-efficiency power electronics to maximize power density, without giving up efficiency performance. At the end of the day, the GaN technology opens the door to a new world of products that have not been possible until now.”
– Kai Dong | Delta Electronics Manager, R&D

Advancing GaN reliability

At TI, our goal is to help engineers everywhere validate the reliability of their GaN device. That’s why we’ve partnered with the JC-70 Wide Bandgap Power Electronic Conversion Semiconductors main committee of the Joint Electron Device Engineering Council to help develop industry standards for reliability and qualification, data-sheet parameters, and testing methodologies that further the adoption of GaN technology.

Browse by category

Design with GaN devices

Our portfolio of GaN FETs with integrated driver and protection can help you achieve high power density with lifetime reliability and lower system cost than competing solutions.

Complete your TI GaN design

Whether you want to boost efficiency, improve reliability or lower electromagnetic interference, our portfolio of companion devices is designed to maximize the performance of your GaN system.

Technical resources

Blog
Blog
Driving the electric vehicle evolution with GaN
Learn why GaN is a game-changer when it comes to advancing the electric vehicle revolution.
White paper
White paper
Optimizing GaN performance with an integrated driver
Learn more about how to optimize GaN performance and minimize parasitic inductances with an integrated gate driver.
document-pdfAcrobat PDF
Resource
Resource
Reference designs related to GaN
Use our reference design selection tools to find GaN designs that best fit your application and parameters.