The ISO5852S-EP device is a 5.7-kVRMS, reinforced isolated gate
driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink
current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a
supply range from minimum 15-V to maximum 30-V. Two complementary CMOS inputs control the output
state of the gate driver. The short propagation time of 76 ns provides accurate control of the
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an
overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the
isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin
to low over a time span of 2 µs. When the OUTL pin reaches 2 V with respect to the most-negative
supply potential, VEE2, the gate-driver output is pulled hard to the
VEE2 potential which turns the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier pulling
the FLT output at the input side low and blocking the isolator input. Mute
logic is activated through the soft-turnoff period. The FLT output condition
is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the
When the IGBT is turned off during normal operation with a bipolar output supply, the
output is hard clamp to VEE2. If the output supply is unipolar, an active
Miller clamp can be used, allowing Miller current to sink across a low-impedance path which
prevents the IGBT from dynamic turnon during high-voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two
undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side
has insufficient supply, the RDY output goes low, otherwise this output is high.
The ISO5852S-EP device is available in a 16-pin SOIC package. Device operation is
specified over a temperature range from –55°C to +125°C ambient.