ISOW7841A-Q1

• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
  • Device temperature Grade 1: –40°C to 125°C Ambient Operating Temperature
• 100 Mbps data rate
• Robust isolation barrier:
  • >100-Year projected lifetime at 1 kV_RMS working voltage
  • Up to 5000 V_RMS isolation rating
  • Up to 10 kV_PK surge capability
  • ±100 kV/µs minimum CMTI
• Integrated high-efficiency DC-DC converter with on-chip transformer
• 3-V to 5.5-V Wide input supply range
• Regulated 5-V or 3.3-V output
• Up to 0.65-W output power
• 5 V to 5 V; 5 V to 3.3 V: Available load current ≥ 130 mA
• 3.3 V to 3.3 V: Available load current ≥ 75 mA ; 3.3 V to 5 V: Available load current ≥ 40 mA
• Soft-start to limit inrush current
• Overload and short-circuit protection
• Thermal shutdown
• Default output: High and Low options
• Low propagation delay: 13 ns Typ (5-V supply)
• Robust electromagnetic compatibility (EMC)
  • System-level ESD, EFT, and surge immunity
  • ±8 kV IEC 61000-4-2 contact discharge protection across isolation barrier
  • Low emissions
• 16-pin wide SOIC package
• Safety-related certifications:
  • 7071-V_PK reinforced isolation per DIN V VDE V 0884-11:2017-01
  • 5000-V_RMS isolation for 1 minute per UL 1577
  • CSA Certification per IEC 60950-1, IEC 62368-1 and IEC 60601-1 end equipment standards
  • CQC Approval per GB4943.1-2011
  • TUV Certification according to EN 60950-1 and EN 61010-1
  • All certifications are planned

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The ISOW7841A-Q1 is an automotive qualified high-performance, quad-channel reinforced digital isolator with an integrated high-efficiency power converter. The low emissions integrated DC-DC converter provides up to 650 mW of isolated power at high efficiency and can be configured for various input and output voltage configurations. Therefore this device eliminates the need for a separate isolated power supply in space-constrained isolated designs.

The ISOW7841A-Q1 device provides high electromagnetic immunity and low emissions while isolating CMOS or LVCMOS digital I/Os. The signal-isolation channel has a logic input and output buffer separated by a double capacitive silicon dioxide (SiO₂) insulation barrier, whereas, power isolation uses on-chip transformers separated by thin film polymer as insulating material. If the input signal is lost, the default output is high for the ISOW7841A-Q1 without the F suffix and low for the device with the F suffix.

These devices help prevent noise currents on data buses, such as CAN, or other circuits from entering the local ground and interfering with or damaging sensitive circuitry. Through innovative chip design and layout techniques, electromagnetic compatibility of the device has been significantly enhanced to ease system-level ESD, EFT, surge and emissions compliance. The high-efficiency of the power converter allows operation at a higher ambient temperature. The device is available in a 16-pin SOIC wide-body (SOIC-WB) DWE package.