Product details
Parameters
We are not able to display this information. Please refer to the product data sheet.Package | Pins | Size
Features
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3
Typ)
- 0- to 10-V Switching on Data I/O Ports
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 20 pF Max, B Port)
- VCC Operating Range From 4.75 V to 5.25 V
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model
(A114-B, Class II) - 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model
- Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
Description
The TS5N214 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distorion on the data bus. Specifically designed to support high-bandwidth applications, the TS5N214 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The TS5N214 is a 2-bit 1-of-4 multiplexer/demultiplexer with separate output-enable (1OE, 2OE) inputs. The select (S0, S1) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
Technical documentation
Type | Title | Date | |
---|---|---|---|
* | Datasheet | TS5N214 datasheet | Jul. 28, 2005 |
Application note | Selecting the Right Texas Instruments Signal Switch (Rev. B) | Apr. 02, 2020 | |
Application note | Multiplexers and Signal Switches Glossary | Mar. 06, 2020 | |
Application note | Preventing Excess Power Consumption on Analog Switches | Jul. 03, 2008 | |
Application note | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | Jul. 08, 2004 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages. The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.
Features
- Quick testing of TI's leaded surface mount packages
- Allows leaded suface mount packages to be plugged into 100mil spaced bread board
- Supports TI's 8 most popular leaded packages with a single panel
CAD/CAE symbols
Package | Pins | Download |
---|---|---|
SSOP (DBQ) | 16 | View options |
TSSOP (PW) | 16 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
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