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TXB0102

ACTIVE

2-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect

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Data sheet

TXB0102

ACTIVE
Data sheet Order now

Product details

Bits (#) 2 Data rate (max) (Mbps) 100 Topology Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.2 Vin (max) (V) 3.6 Vout (min) (V) 1.2 Vout (max) (V) 5.5 Applications GPIO, SPI, UART Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Technology family TXB Supply current (max) (mA) 0.008 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 2 Data rate (max) (Mbps) 100 Topology Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.2 Vin (max) (V) 3.6 Vout (min) (V) 1.2 Vout (max) (V) 5.5 Applications GPIO, SPI, UART Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Technology family TXB Supply current (max) (mA) 0.008 Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YZP) 8 2.8125 mm² 2.25 x 1.25 VSSOP (DCU) 8 6.2 mm² 2 x 3.1
  • Available in the Texas Instruments NanoFree™ Packages
  • 1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V On B Port (V CCA ≤ V CCB)
  • V CC Isolation Feature – If Either V CC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to V CCA
  • Low Power Consumption, 4-µA Max I CC
  • I off Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2500-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)
    • B Port
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)
  • Available in the Texas Instruments NanoFree™ Packages
  • 1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V On B Port (V CCA ≤ V CCB)
  • V CC Isolation Feature – If Either V CC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to V CCA
  • Low Power Consumption, 4-µA Max I CC
  • I off Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2500-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)
    • B Port
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)

The TXB0102 device is a 2-bit noninverting translator that uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track V CCB. V CCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. V CCA must not exceed V CCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

This device is fully specified for partial-power-down applications using I off. The I off circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

OE must be tied to GND through a pulldown resistor to assure the high-impedance state during power up or power down; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

NanoFree™ technology is a major breakthrough in IC packaging concepts, using the die as the package.

The TXB0102 device is a 2-bit noninverting translator that uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track V CCB. V CCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. V CCA must not exceed V CCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

This device is fully specified for partial-power-down applications using I off. The I off circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

OE must be tied to GND through a pulldown resistor to assure the high-impedance state during power up or power down; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

NanoFree™ technology is a major breakthrough in IC packaging concepts, using the die as the package.
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Same functionality with different pin-out to the compared device
TXB0104 ACTIVE 4-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15 kV ESD Protect Same function for 4-channel voltage translator
TXB0108 ACTIVE 8-Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15-kV ESD Protect Same function in 8-channel version

Technical documentation

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Top documentation Type Title Format options Date
* Data sheet TXB0102 2-Bit Bidirectional Voltage-Level Translator With Auto Direction Sensing and ±15-kV ESD Protection datasheet (Rev. E) PDF | HTML 17 Oct 2023
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 12 Jul 2024
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 03 Jul 2024
Application note Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 29 Sep 2023
Application note Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 28 Jun 2023
Selection guide Voltage Translation Buying Guide (Rev. A) 15 Apr 2021
Application note Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A) 28 Mar 2018
Application note Factors Affecting VOL for TXS and LSF Auto-bidirectional Translation Devices 19 Nov 2017
Application note Biasing Requirements for TXS, TXB, and LSF Auto-Bidirectional Translators 30 Oct 2017
Application note A Guide to Voltage Translation With TXS-Type Translators 29 Jun 2010
Application note A Guide to Voltage Translation With TXB-Type Translators 03 Mar 2010

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

5-8-LOGIC-EVM — Generic logic evaluation module for 5-pin to 8-pin DCK, DCT, DCU, DRL and DBV packages

Flexible EVM designed to support any device that has a DCK, DCT, DCU, DRL, or DBV package in a 5 to 8 pin count.
User guide: PDF
Not available on TI.com
Evaluation board

TXB-EVM — 1 to 8 bit TXB translator family evaluation module

This EVM is designed to support the TXB auto bidirectional families for single, dual, four and eight channel devices. The TXB devices belong to the auto bidirectional translation family with an operating voltage designed to level translation between 1.2V and 5.5 V.
User guide: PDF | HTML
Not available on TI.com
Simulation model

TXB0102 IBIS Model (Rev. A)

SCEM563A.ZIP (71 KB) - IBIS Model
Download
Reference designs

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Schematic: PDF
Reference designs

TIDA-00403 — Ultrasonic Distance Measurement using the TLV320AIC3268 miniDSP CODEC Reference Design

The TIDA-00403 reference design uses off-the-shelf EVMs for ultrasonic distance measurement solutions using algorithms within the TLV320AIC3268 miniDSP. In conjunction with TI’s PurePath Studio design suite, a robust and user configurable ultrasonic distance measurement system can be designed (...)
Design guide: PDF
Schematic: PDF
Package Pins CAD symbols, footprints & 3D models
DSBGA (YZP) 8 Ultra Librarian
VSSOP (DCU) 8 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

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