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UCC21736-Q1

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Automotive 5.7kVrms, ±10A isolated single-channel gate driver with active short circuit for IGBT/SiC

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Data sheet
UCC21736-Q1 is in the process of being discontinued
Consider one of these alternates:
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Drop-in replacement with upgraded functionality to the compared device
UCC21737-Q1 ACTIVE Automotive 10-A isolated single-channel gate driver for SiC/IGBT, active short-circuit protection Automotive 10-A source and sink reinforced isolated single-channel
Same functionality with different pin-out to the compared device
UCC21759-Q1 ACTIVE Automotive 3.0kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC Basic isolation, internal Miller clamp, DESAT protection, has no active short circuit or integrated analog-to-PWM sensor

UCC21736-Q1

LAST TIME BUY
Data sheet Order now

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 2121 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 2121 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • SiC MOSFETs and IGBTs up to 2121 Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270-ns response time fast overcurrent protection
  • External active miller clamp
  • 900-mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12V VDD UVLO and -3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • 5.7-kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • SiC MOSFETs and IGBTs up to 2121 Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270-ns response time fast overcurrent protection
  • External active miller clamp
  • 900-mA soft turn-off when fault happens
  • ASC input on isolated side to turn on power switch during system fault
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12V VDD UVLO and -3V VEE UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C

The UCC21736-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21736-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21736-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21736-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21736-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21736-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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Technical documentation

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Type Title Date
* Data sheet UCC21736-Q1 10-A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI datasheet (Rev. A) PDF | HTML 06 May 2020
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 01 Sep 2023
Technical article Understanding functional safety for gate drivers and traction inverter systems 10 Aug 2022
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. R) 12 Jul 2022
Application note The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Design guide SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing 18 Dec 2019
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage 17 Apr 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21732QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules

The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)

User guide: PDF
Not available on TI.com
Simulation model

UCC21736-Q1 Unencrypted PSpice Model

SLUM743.ZIP (180 KB) - PSpice Model
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Calculation tool

SLUC695 — UCC217xx XL Calculator Tool

Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC21710-Q1 — Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC UCC21732-Q1 — Automotive 5.7-kVrms ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiCFETs UCC21736-Q1 — Automotive 5.7kVrms, ±10A isolated single-channel gate driver with active short circuit for IGBT/SiC UCC21739-Q1 — Automotive 3kVrms, ±10A single-channel isolated gate driver w/ isolated analog sensing for IGBT/SiC UCC21750 — 5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs UCC21750-Q1 — Automotive 5.7kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC UCC21759-Q1 — Automotive 3.0kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC
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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

PMP23223 — Smart isolated gate driver with bias supply reference design

This reference design demonstrates the combination of UCC21732 gate driver with a UCC14xxx series bias supply. This design can be used to drive a variety of power switches, including connecting directly to a Wolfspeed Silicon Carbide (SiC) field-effect transistor (FET) module. This reference design (...)
Test report: PDF
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SOIC (DW) 16 View options
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