The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 990-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 700-VRMS working voltage with longer than 40 years isolation barrier life, 6-kVPK surge immunity, as well as providing low part-to-part skew, and >150-V/ns common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers versatility and simplifying the system design effort, size, and cost.