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UCC27712

ACTIVE

1.8-A/2.8-A, 620V half bridge driver with interlock

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Data sheet

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NEW UCC27734 ACTIVE 700V 4A half-bridge gate driver with 8V UVLO and interlock same functionality

UCC27712

ACTIVE
Data sheet Order now

Product details

Bootstrap supply voltage (max) (V) 700 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Peak output current (A) 2.8 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 10 Rating Catalog Propagation delay time (µs) 0.1 Rise time (ns) 16 Fall time (ns) 10 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Dead time control, Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 700 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Peak output current (A) 2.8 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 10 Rating Catalog Propagation delay time (µs) 0.1 Rise time (ns) 16 Fall time (ns) 10 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Dead time control, Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • High-side and low-side configuration
  • Dual inputs with output interlock and 150-ns deadtime
  • Fully operational up to 620-V, 700-V absolute maximum on HB pin
  • 10-V to 20-V VDD recommended range
  • Peak output current 2.8-A sink, 1.8-A source
  • dv/dt immunity of 50 V/ns
  • Logic operational up to –11 V on HS pin
  • Negative voltage tolerance on inputs of –5 V
  • Large negative transient safe operating area
  • UVLO protection for both channels
  • Small propagation delay (100-ns typical)
  • Delay matching (12-ns typical)
  • Floating channel designed for bootstrap operation
  • Low quiescent current
  • TTL and CMOS compatible inputs
  • Industry standard SOIC-8 package
  • All parameters specified over temperature range, –40 °C to +125 °C
  • High-side and low-side configuration
  • Dual inputs with output interlock and 150-ns deadtime
  • Fully operational up to 620-V, 700-V absolute maximum on HB pin
  • 10-V to 20-V VDD recommended range
  • Peak output current 2.8-A sink, 1.8-A source
  • dv/dt immunity of 50 V/ns
  • Logic operational up to –11 V on HS pin
  • Negative voltage tolerance on inputs of –5 V
  • Large negative transient safe operating area
  • UVLO protection for both channels
  • Small propagation delay (100-ns typical)
  • Delay matching (12-ns typical)
  • Floating channel designed for bootstrap operation
  • Low quiescent current
  • TTL and CMOS compatible inputs
  • Industry standard SOIC-8 package
  • All parameters specified over temperature range, –40 °C to +125 °C

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.
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Technical documentation

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* Data sheet UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock datasheet (Rev. B) PDF | HTML Mar 5, 2020
Application note Selecting Gate Drivers for HVAC Systems (Rev. A) PDF | HTML Nov 7, 2025
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML Mar 25, 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML Jan 22, 2024
Technical article Selecting the right level of integration to meet motor design requirements PDF | HTML Jan 4, 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML Sep 8, 2023
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML Feb 17, 2022
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) Apr 7, 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. May 12, 2020
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) Oct 29, 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse PDF | HTML Sep 19, 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadti PDF | HTML May 30, 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage PDF | HTML Apr 17, 2018

Design & development

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Evaluation board

UCC27712EVM-287 — UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver With Interlock Evaluation Module

UCC27712EVM-287 is designed for evaluating UCC27712D, which is a 620V half bridge gate driver with high source and sink peak current capability. This EVM could be served to evaluate the driver IC against its datsheet. The EVM can also be used as Driver IC component selection guide. The EVM can be (...)
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Simulation model

UCC27712 PSpice Transient Model

SLUM579.ZIP (68 KB) - PSpice model
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Simulation model

UCC27712 TINA-TI Transient Reference Design

SLUM599.TSC (1513 KB) - TINA-TI reference design
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Simulation model

UCC27712 TINA-TI Transient Spice Model

SLUM600.ZIP (23 KB) - TINA-TI Spice model
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Simulation model

UCC27712 Unencrypted PSpice Transient Model

SLUM637.ZIP (3 KB) - PSpice model
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