Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von INA148-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to 125°C
Ambient Operating Temperature Range - Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C6
- Device MM ESD Classification Level M2
- Device Temperature Grade 1: –40°C to 125°C
- High Common-Mode Voltage
- 75 V at VS = 5 V
- ±200 V at VS = ±15 V
- Fixed Differential Gain = 1 V/V
- Low Quiescent Current: 260 µA
- Wide Supply Range
- Single Supply: 2.7 V to 36 V
- Dual Supplies: ±1.35 V to ±18 V
- Low Gain Error: 0.075% (Maximum)
- Low Nonlinearity: 0.002% (Maximum)
- High CMR: 86 dB
- Surface-Mount 8-pin SOIC Package
Beschreibung von INA148-Q1
The INA148-Q1 is a precision, low-power, unity-gain difference amplifier with a high common-mode input voltage range. The device consists of a monolithic, precision, bipolar operational amplifier with a thin-film resistor network.
The on-chip resistors are laser trimmed for an accurate 1-V/V differential gain and high common-mode rejection. Excellent temperature tracking of the resistor network maintains high gain accuracy and common-mode rejection over temperature. The INA148-Q1 operates on single or dual supplies. These features make the INA148-Q1 suitable for HEV/EV and Powertrain applications, specifically in battery management systems.
The INA148-Q1 is available in an 8-pin SOIC, surface-mount package, and is specified for operation over the temperature range of –40°C to 125°C.