INA780B

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85-V, 16-Bit, hochpräziser digitaler Leistungsmonitor mit I²C-Ausgang und 400-μΩ-EZShunt-Technologie

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Datenblatt

document-pdfAcrobat INA780x 85 V , 16 -Bit, Precision I2C Output Digital Power Monitor with EZShunt Technology datasheet (Rev. A) (Englisch) PDF | HTML

INA780B

AKTIV

Datenblatt

Jetzt bestellen

Produktdetails

Common-mode voltage (max) (V)

85

Common-mode voltage (min) (V)

-0.1

Continuous current (max) (A)

75

Input offset current (±) (max) (mA)

125

Input offset current drift (±) (typ) (µA/°C)

10

Gain error (%)

0.4

Iq (max) (mA)

1

Digital interface

I2C

Resolution (Bits)

16

Features

Alert Function, Bidirectional, Digital Temp Monitor, Integrated Power Monitor, Integrated Shunt, Low-side Capable, Standard precision

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Common-mode voltage (max) (V)

85

Common-mode voltage (min) (V)

-0.1

Continuous current (max) (A)

75

Input offset current (±) (max) (mA)

125

Input offset current drift (±) (typ) (µA/°C)

10

Gain error (%)

0.4

Iq (max) (mA)

1

Digital interface

I2C

Resolution (Bits)

16

Features

Alert Function, Bidirectional, Digital Temp Monitor, Integrated Power Monitor, Integrated Shunt, Low-side Capable, Standard precision

Rating

Catalog

Operating temperature range (°C)

-40 to 125

VSON (DEK)

15

See data sheet

Low loss integrated shunt resistor
- Internal resistance: 400 µΩ, TA = 25°C
- Continuous current: ±75 A, TA = 25°C
- Peak measurement capability: ±78.64 A
Current monitoring accuracy: A/B Grade, maximum
- Offset current: ±12.5 mA / ±125 mA
- Offset drift: ±50 µA/°C (A and B Grades)
- System gain error: ±0.75% / ±1.25%
- Common-mode rejection: ±0.25 / ±2.5 mA/V
Power monitoring accuracy: A/B Grade, maximum
- ±0.9% / ±1.6% at 25°C, full scale
Energy and charge accuracy: A/B Grade, maximum
- ±1.4% / ±2.1% at 25°C, full scale
Temperature sensor: ±1.5°C (maximum at 25°C)
Precision oscillator: ±0.5% (maximum at 25°C)
Programmable conversion time and averaging
2.94-MHz high-speed I2C interface with 16 pin-selectable addresses
Operates from a 2.7-V to 5.5-V supply:
- Operational current: 640 µA (typical)
- Shutdown current: 5 µA (maximum)

Low loss integrated shunt resistor
- Internal resistance: 400 µΩ, TA = 25°C
- Continuous current: ±75 A, TA = 25°C
- Peak measurement capability: ±78.64 A
Current monitoring accuracy: A/B Grade, maximum
- Offset current: ±12.5 mA / ±125 mA
- Offset drift: ±50 µA/°C (A and B Grades)
- System gain error: ±0.75% / ±1.25%
- Common-mode rejection: ±0.25 / ±2.5 mA/V
Power monitoring accuracy: A/B Grade, maximum
- ±0.9% / ±1.6% at 25°C, full scale
Energy and charge accuracy: A/B Grade, maximum
- ±1.4% / ±2.1% at 25°C, full scale
Temperature sensor: ±1.5°C (maximum at 25°C)
Precision oscillator: ±0.5% (maximum at 25°C)
Programmable conversion time and averaging
2.94-MHz high-speed I2C interface with 16 pin-selectable addresses
Operates from a 2.7-V to 5.5-V supply:
- Operational current: 640 µA (typical)
- Shutdown current: 5 µA (maximum)

The INA780x is a digital power monitor with an integrated current sensing element along with a 16-bit delta-sigma ADC specifically designed for current-sensing applications. The device can measure full-scale currents up to ±78.64 A with common-mode voltage support from –0.1 V to +85 V.

The INA780x reports current, bus voltage, die temperature, power, energy and charge accumulation while employing a precision ±0.5% integrated oscillator, all while performing the needed calculations in the background. The integrated temperature sensor is ±2.5°C accurate over the junction temperature range.

The low offset and gain drift design of the INA780x allows the device to be used in precise systems that do not undergo multi-temperature calibration during manufacturing.

The device allows for selectable ADC conversion times from 50 µs to 4.12 ms as well as sample averaging from 1x to 1024x, which further helps reduce the noise of the measured data.

The INA780x is a digital power monitor with an integrated current sensing element along with a 16-bit delta-sigma ADC specifically designed for current-sensing applications. The device can measure full-scale currents up to ±78.64 A with common-mode voltage support from –0.1 V to +85 V.

The INA780x reports current, bus voltage, die temperature, power, energy and charge accumulation while employing a precision ±0.5% integrated oscillator, all while performing the needed calculations in the background. The integrated temperature sensor is ±2.5°C accurate over the junction temperature range.

The low offset and gain drift design of the INA780x allows the device to be used in precise systems that do not undergo multi-temperature calibration during manufacturing.

The device allows for selectable ADC conversion times from 50 µs to 4.12 ms as well as sample averaging from 1x to 1024x, which further helps reduce the noise of the measured data.

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Technische Dokumentation

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Top-Dokumentation	Typ	Titel	Format-Optionen	Datum
*	Datenblatt	INA780x 85 V , 16 -Bit, Precision I2C Output Digital Power Monitor with EZShunt Technology datasheet (Rev. A)	PDF \| HTML	19.12.2023
	Anwendungshinweis	Risks and Prevention of ESD, EOS, and Latch Up Events for Current Sense Amplifiers	PDF \| HTML	18.11.2024
	Anwendungshinweis	How EZShunt Technology Simplifies and Reduces Error in Shunt-Based Designs	PDF \| HTML	27.06.2024
	Technischer Artikel	Bringing design simplicity, low drift, and small size to integrated-shunt solutions	PDF \| HTML	04.01.2024
	Application brief	Improving Power Amplifier Efficiency With Current Monitors (Rev. B)	PDF \| HTML	24.07.2023
	Zertifikat	INA780BEVM EU Declaration of Conformity (DoC)		17.05.2023

Design und Entwicklung

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Evaluierungsplatine

INA780-INA781EVM — Evaluierungsmodul INA780 und INA781 für EZShunt™ Digital Power Monitor mit integriertem Shunt-Widers

Das Evaluierungsmodul INA780 und IN781 (EVM) ist eine kompakte Plattform zur Evaluierung der Hauptmerkmale und Leistung der hochpräzisen, digitalen Leistungsmonitore INA780A, INA780B oder INA781 mit EZShunt™ Technologie in spezifizierten Eingangsstrom-, Gleichtaktspannungs- und Temperaturbereichen. (...)

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