Gehäuseinformationen
| Gehäuse | Pins CFP (NAC) | 10 |
| Betriebstemperaturbereich (°C) -55 to 125 |
| Gehäusemenge | Träger 54 | JEDEC TRAY (5+1) |
Merkmale von LMP2012QML-SP
- Total Ionizing Dose 50 krad(Si)
- ELDRS Free 50 krad(Si)
- TCVIO Temperature Sensitivity (Typical) 0.015 µV/°C
- Low Ensured VIO over Temperature 60 µV
- Low Noise with no 1/f 35nV/√Hz
- High CMRR 90 dB
- High PSRR 90 dB
- High AVOL 85 dB
- Wide Gain-Bandwidth Product 3MHz
- High Slew Rate 4V/µs
- Rail-to-Rail Output 30mV
- No External Capacitors Required
(For VS = 5V, Typical Unless Otherwise Noted)
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Beschreibung von LMP2012QML-SP
The LMP2012 offers unprecedented accuracy and stability. This device utilizes patented techniques to measure and continually correct the input offset error voltage. The result is an amplifier which is ultra stable over time and temperature. It has excellent CMRR and PSRR ratings, and does not exhibit the familiar 1/f voltage and current noise increase that plagues traditional amplifiers. The combination of the LMP2012 characteristics makes it a good choice for transducer amplifiers, high gain configurations, ADC buffer amplifiers, DAC I-V conversion, and any other 2.7V-5V application requiring precision and long term stability.
Other useful benefits of the LMP2012 are rail-rail output, low supply current of 930 μA, and wide gain-bandwidth product of 3 MHz. These extremely versatile features found in the LMP2012 provide high performance and ease of use.
The QMLV version of the LMP2012 has been rated to tolerate a total dose level of 50krad/(Si) radiation by test method 1019 of MIL-STD-883.