Gehäuseinformationen
| Gehäuse | Pins TSSOP (PW) | 14 |
| Betriebstemperaturbereich (°C) -55 to 125 |
| Gehäusemenge | Träger 250 | SMALL T&R |
Merkmale von OPA4H014-SEP
- Radiation tolerant
- Single even latch-up (SEL) immune to 43 MeV•cm2/mg
- ELDRS free to 30 krad(Si)
- Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si)
- Space enhanced plastic
- Au bondwire and NiPdAu lead finish
- Enhanced mold compound for low outgassing
- One fabrication, assembly, and test site
- Extended product life cycle
- Extended product change notification
- Product traceability
- Very-low offset drift: 1 µV/°C maximum
- Very-low offset: 120 µV
- Low input bias current: 10 pA maximum
- Low noise: 5.1 nV/√Hz
- Slew rate: 20 V/µs
- Low supply current: 2 mA maximum
- Input voltage range includes V– supply
- Wide supply range: 4.5 V to 18 V
Beschreibung von OPA4H014-SEP
The OPA4H014-SEP is a low-power JFET input operational amplifier (op amp) that features good drift and low input bias current. With an input range that includes V– and a rail-to-rail output, designers can take advantage of the low-noise characteristics of JFET amplifiers while interfacing to single-supply, precision analog-to-digital converters (ADCs) and digital-to-analog converters (DACs).
The OPA4H014-SEP achieves 11‑MHz unity-gain bandwidth and 20-V/µs slew rate, while consuming only 1.8 mA (typical) of quiescent current. This device runs on a single 4.5‑V to 18‑V supply or dual ±2.25‑V to ±9‑V supplies.
The op amp is built in a plastic, 14‑pin, TSSOP package with radiation hardness up to 43 MeV•cm2/mg (SET) and is ELDRS free up to 30 krad(Si).