NEU

SN54SC6T14-SEP

AKTIV

Radiation-tolerant six-bit inverting fixed-direction level translator with Schmitt-trigger inputs

Produktdetails

Technology family SCxT Vout (min) (V) 1.2 Vout (max) (V) 5.5 Features Balanced outputs, Over-voltage tolerant inputs Input type TTL-Compatible CMOS Output type Push-Pull Rating Space Operating temperature range (°C) -55 to 125
Technology family SCxT Vout (min) (V) 1.2 Vout (max) (V) 5.5 Features Balanced outputs, Over-voltage tolerant inputs Input type TTL-Compatible CMOS Output type Push-Pull Rating Space Operating temperature range (°C) -55 to 125
TSSOP (PW) 14 32 mm² 5 x 6.4
  • Vendor item drawing available, VID V62/24618
  • Total ionizing dose characterized at 30 krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg
    • Single event transient (SET) characterized to 43 MeV-cm2 /mg
  • Wide operating range of 1.2V to 5.5V
  • Single-supply translating gates at 5/3.3/2.5/1.8/1.2V VCC
    • TTL compatible inputs:
      • Up translation:
        • 1.8-V – Inputs from 1.2V
        • 2.5V – Inputs from 1.8V
        • 3.3V – Inputs from 1.8V, 2.5V
        • 5.0V – Inputs from 2.5V, 3.3V
      • Down translation:
        • 1.2V – Inputs from 1.8V, 2.5V, 3.3V, 5.0V

        • 1.8-V – Inputs from 2.5V, 3.3V, 5.0V
        • 2.5V – Inputs from 3.3V, 5.0V
        • 3.3V – Inputs from 5.0V
  • 5.5V tolerant input pins
  • Output drive up to 25 mA AT 5V
  • Latch-up performance exceeds 250 mA per JESD 17
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Product traceability
    • Meets NASAs ASTM E595 outgassing specification
  • Vendor item drawing available, VID V62/24618
  • Total ionizing dose characterized at 30 krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg
    • Single event transient (SET) characterized to 43 MeV-cm2 /mg
  • Wide operating range of 1.2V to 5.5V
  • Single-supply translating gates at 5/3.3/2.5/1.8/1.2V VCC
    • TTL compatible inputs:
      • Up translation:
        • 1.8-V – Inputs from 1.2V
        • 2.5V – Inputs from 1.8V
        • 3.3V – Inputs from 1.8V, 2.5V
        • 5.0V – Inputs from 2.5V, 3.3V
      • Down translation:
        • 1.2V – Inputs from 1.8V, 2.5V, 3.3V, 5.0V

        • 1.8-V – Inputs from 2.5V, 3.3V, 5.0V
        • 2.5V – Inputs from 3.3V, 5.0V
        • 3.3V – Inputs from 5.0V
  • 5.5V tolerant input pins
  • Output drive up to 25 mA AT 5V
  • Latch-up performance exceeds 250 mA per JESD 17
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Product traceability
    • Meets NASAs ASTM E595 outgassing specification

The SN54SC6T14-SEP device contains six independent Inverters with Schmitt-trigger inputs and extended voltage operation to allow for level translation. Each gate performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.2V, 1.8-V, 2.5V, 3.3V, and 5V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example 1.2V input to 1.8V output or 1.8V input to 3.3V output). Additionally, the 5V tolerant input pins enable down translation (for example 3.3V to 2.5V output).

The SN54SC6T14-SEP device contains six independent Inverters with Schmitt-trigger inputs and extended voltage operation to allow for level translation. Each gate performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.2V, 1.8-V, 2.5V, 3.3V, and 5V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example 1.2V input to 1.8V output or 1.8V input to 3.3V output). Additionally, the 5V tolerant input pins enable down translation (for example 3.3V to 2.5V output).

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Technische Dokumentation

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Typ Titel Datum
* Data sheet SN54SC6T14-SEP Radiation Tolerant, Hex Schmitt-Trigger Inverters With Integrated Translation datasheet PDF | HTML 20 Jan 2023
* Radiation & reliability report SN54SC6T14-SEP Production Flow and Reliability Report PDF | HTML 10 Apr 2024
* Radiation & reliability report SN54SC6T07-SEP Single Event Effects Radiation Report PDF | HTML 21 Feb 2024
* Radiation & reliability report SN54SC6T14-SEP Total Ionizing Dose (TID) Radiation Report PDF | HTML 12 Feb 2024
Application note Understanding Transient Drive Strength vs. DC Drive Strength in CMOS Output Buffers PDF | HTML 14 Mai 2024

Design und Entwicklung

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