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BQ2201

COMPRA POR ÚLTIMA VEZ

CI de controlador no volátil SRAM para 1 banco SRAM

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BQ2201

COMPRA POR ÚLTIMA VEZ
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Detalles del producto

Rating Catalog Features 1-Bank SRAM, CMOS, Non-volatile controller, Write-protection Operating current (typ) (µA) 3000 Vin (max) (V) 5.5 Operating temperature range (°C) -40 to 85
Rating Catalog Features 1-Bank SRAM, CMOS, Non-volatile controller, Write-protection Operating current (typ) (µA) 3000 Vin (max) (V) 5.5 Operating temperature range (°C) -40 to 85
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation
  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.

During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.

The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.

During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.

The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.
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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Fecha
* Data sheet SRAM Nonvolatile Controller Unit datasheet 05 sep 1999

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL)/reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje